- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄362244 > AM29F016B-150FI 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7832Z with Lead Free Packaging PDF資料下載
參數(shù)資料
| 型號(hào)： | AM29F016B-150FI |
| 英文描述： | 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7832Z with Lead Free Packaging |
| 中文描述： | x8閃存EEPROM的 |
| 文件頁(yè)數(shù)： | 39/39頁(yè) |
| 文件大?。?/td> | 728K |
| 代理商： | AM29F016B-150FI |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)當(dāng)前第39頁(yè)
Am29F002B/Am29F002NB
39
REVISION SUMMARY
Revision A (July 1998)
Initial release.
Revision B (January 1999)
Distinctive Characteristics
Added:
I
20-year data retention at 125
°
C
— Reliable operation for the life of the system
AC Characterisitics—Read Operations Table
t
EHQZ
, t
GHQZ
: Changed the 55 speed option to 15 ns
from 20 ns
AC Characteristics—Erase/Program Operations
t
WLAX
: Changed the 90 speed option to 45 ns from 50 ns.
t
DVWH
: Changed the 55 speed option to 25 ns from 30 ns.
t
WLWH
: changed the 55 speed option to 30 ns from 35 ns.
AC Characteristics—Alternate CE# Controlled
Erase/Program Operations
t
DVEH
: Changed the 55 speed option to 25 ns from 30 ns.
t
ELEH
: Changed the 55 speed option to 30 ns from 35 ns.
t
ELAX
: Changed the 90 speed option to 45 ns from 50 ns.
DC Characteristics—TTL/NMOS Compatible
I
CC1
, I
CC2
, I
CC3
,
I
CC4
: Added Note 2 “Maximum I
CC
specifications are tested with V
CC
= V
CCmax
”.
DC Characteristics—CMOS Compatible
I
CC1
, I
CC2
, I
CC3
,
I
CC4
: Added Note 2 “Maximum I
CC
specifications are tested with V
CC
= V
CCmax
”.
Revision C (November 12, 1999)
AC Characteristics—Figure 11. Program
Operations Timing and Figure 12. Chip/Sector
Erase Operations
Deleted t
GHWL
and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision D (November 28, 2000)
Global
Added table of contents.
Ordering Information
Deleted burn-in option.
Table 5, Command Definitions
In Note
4, changed the lower address bit of don’t care
range to A11.
Trademarks
Copyright 2000 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F016B-150SC | x8 Flash EEPROM |
| AM29F016B-150SE | x8 Flash EEPROM |
| AM29F016B-150SEB | 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF3007L with Standard Packaging |
| AM29F016B-150SI | 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF3007L with Lead Free Packaging |
| AM29F016B-75E4C | 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRL2505L with Lead Free Packaging |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F016B90EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F016B-90EC | 制造商:Advanced Micro Devices 功能描述:NOR Flash Parallel 5V 16Mbit 2M x 8bit 90ns 48-Pin TSOP 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 5V 16M-Bit 2M x 8 90ns 48-Pin TSOP |
| AM29F016B-90SC | 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 5V 16M-Bit 2M x 8 90ns 44-Pin SOP |
| AM29F016D-120DPC 1 | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 16Mbit 2M x 8bit 120ns Die |
| AM29F016D-120DPI 1 | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 16Mbit 2M x 8bit 120ns Die |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。