參數(shù)資料
型號: AM29F016B-150SE
英文描述: x8 Flash EEPROM
中文描述: x8閃存EEPROM的
文件頁數(shù): 32/39頁
文件大?。?/td> 728K
代理商: AM29F016B-150SE
32
Am29F002B/Am29F002NB
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
1. Not 100% tested.
2.
See the “Erase and Programming Performance” section for more information.
Parameter
Speed Options
JEDEC
Std.
Description
-55
-70
-90
-120
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
55
70
90
120
ns
t
AVEL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
45
45
45
50
ns
t
DVEH
t
DS
Data Setup Time
Min
25
30
45
50
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
OES
Output Enable Setup Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
30
35
45
50
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
20
ns
t
WHWH1
t
WHWH1
Programming Operation (Note 2)
Typ
7
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
1
sec
相關(guān)PDF資料
PDF描述
AM29F016B-150SEB 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF3007L with Standard Packaging
AM29F016B-150SI 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF3007L with Lead Free Packaging
AM29F016B-75E4C 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRL2505L with Lead Free Packaging
AM29F016B-75E4CB EEPROM
AM29F016B-75E4I x8 Flash EEPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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