參數(shù)資料
型號: AM29F016B-75F4CB
英文描述: 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF3717 with Standard Packaging
中文描述: EEPROM的
文件頁數(shù): 24/39頁
文件大?。?/td> 728K
代理商: AM29F016B-75F4CB
24
Am29F002B/Am29F002NB
TEST CONDITIONS
Table 7.
Test Specifications
KEY TO SWITCHING WAVEFORMS
2.7 k
C
L
6.2 k
5.0 V
Device
Under
Test
Figure 8.
Test Setup
Note:
Diodes are IN3064 or equivalent
Test Condition
-55
All
others
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
100
pF
Input Rise and Fall Times
5
20
ns
Input Pulse Levels
0.0–3.0
0.45–2.4
V
Input timing measurement
reference levels
1.5
0.8, 2.0
V
Output timing measurement
reference levels
1.5
0.8, 2.0
V
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
相關(guān)PDF資料
PDF描述
AM29F016B-75F4I 40V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRFR3504 with Standard Packaging
AM29F016B-75F4IB 40V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR3504 with Lead Free Packaging
AM29F016B-75FC 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRFSL4610 with Standard Packaging
AM29F016B-75FCB A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.; A IRF6619 with Standard Tape and Reel Quantity of 4800
AM29F016B-75FI x8 Flash EEPROM
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