參數資料
型號: AM29F016B-75F4I
英文描述: 40V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRFR3504 with Standard Packaging
中文描述: x8閃存EEPROM的
文件頁數: 35/39頁
文件大?。?/td> 728K
代理商: AM29F016B-75F4I
Am29F002B/Am29F002NB
35
PLCC AND PDIP PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25
°
C, f = 1.0 MHz.
DATA RETENTION
Parameter
Symbol
Parameter Description
Test Conditions
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
4
6
pF
C
OUT
Output Capacitance
V
OUT
= 0
8
12
pF
C
IN2
Control Pin Capacitance
V
PP
= 0
8
12
pF
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°
C
10
Years
125
°
C
20
Years
相關PDF資料
PDF描述
AM29F016B-75F4IB 40V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR3504 with Lead Free Packaging
AM29F016B-75FC 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRFSL4610 with Standard Packaging
AM29F016B-75FCB A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.; A IRF6619 with Standard Tape and Reel Quantity of 4800
AM29F016B-75FI x8 Flash EEPROM
AM29F016B-75FIB EEPROM
相關代理商/技術參數
參數描述
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AM29F016B-90SC 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 5V 16M-Bit 2M x 8 90ns 44-Pin SOP
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