參數(shù)資料
型號: AM29F016B-75FCB
英文描述: A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.; A IRF6619 with Standard Tape and Reel Quantity of 4800
中文描述: EEPROM的
文件頁數(shù): 31/39頁
文件大小: 728K
代理商: AM29F016B-75FCB
Am29F002B/Am29F002NB
31
AC CHARACTERISTICS
Enter
Embedded
Erasing
Temporary Sector Unprotect (Am29F002B only)
Note:
Not 100% tested.
Parameter
All Speed Options
JEDEC
Std.
Description
Unit
t
VIDR
V
ID
Rise and Fall Time (See Note)
Min
500
ns
t
RSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
μs
Note:
The system may use CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an
erase-suspended sector.
Figure 15.
DQ2 vs. DQ6
Erase
Erase
Resume
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
Suspend
Program
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
RESET#
t
VIDR
12 V
0 or 5 V
CE#
WE#
RY/BY#
t
VIDR
t
RSP
Program or Erase Command Sequence
0 or 5 V
Figure 16.
Temporary Sector Unprotect Timing Diagram (Am29F002B only)
相關(guān)PDF資料
PDF描述
AM29F016B-75FI x8 Flash EEPROM
AM29F016B-75FIB EEPROM
AM29F016B-75SC 100V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU3412 with Standard Packaging
AM29F016B-75SCB 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF3706S with Standard Packaging
AM29F016B-75SI x8 Flash EEPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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