參數(shù)資料
型號(hào): AM29F016B-90EE
英文描述: 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFB3306PBF with Standard Packaging
中文描述: x8閃存EEPROM的
文件頁(yè)數(shù): 32/39頁(yè)
文件大?。?/td> 728K
代理商: AM29F016B-90EE
32
Am29F002B/Am29F002NB
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
1. Not 100% tested.
2.
See the “Erase and Programming Performance” section for more information.
Parameter
Speed Options
JEDEC
Std.
Description
-55
-70
-90
-120
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
55
70
90
120
ns
t
AVEL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
45
45
45
50
ns
t
DVEH
t
DS
Data Setup Time
Min
25
30
45
50
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
OES
Output Enable Setup Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
30
35
45
50
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
20
ns
t
WHWH1
t
WHWH1
Programming Operation (Note 2)
Typ
7
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
1
sec
相關(guān)PDF資料
PDF描述
AM29F016D-120DWC1 55V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU3505 with Standard Packaging
AM29F016D-120DWI1 55V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU3505 with Lead Free Packaging
AM29F017B-120E4C 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF3709ZS with Lead Free Packaging
AM29F017B-120E4E x8 Flash EEPROM
AM29F017B-120E4I x8 Flash EEPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F016B-90SC 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 5V 16M-Bit 2M x 8 90ns 44-Pin SOP
AM29F016D-120DPC 1 制造商:Spansion 功能描述:NOR Flash Parallel 5V 16Mbit 2M x 8bit 120ns Die
AM29F016D-120DPI 1 制造商:Spansion 功能描述:NOR Flash Parallel 5V 16Mbit 2M x 8bit 120ns Die
AM29F016D-120E4D 制造商:Spansion 功能描述:IC SM FLASH 5V 16MB
AM29F016D-120E4D 制造商:Spansion 功能描述:FLASH MEMORY IC