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參數(shù)資料
| 型號： | Am29F016D-150EEB |
| 廠商： | Advanced Micro Devices, Inc. |
| 元件分類： | DC/DC變換器 |
| 英文描述： | LM3370 Dual Synchronous Step-Down DC-DC Converter with Dynamic Voltage Scaling Function; Package: LLP; No of Pins: 16; Qty per Container: 1000; Container: Reel |
| 中文描述： | 16兆位（2米× 8位）的CMOS 5.0伏只，統(tǒng)一部門快閃記憶體 |
| 文件頁數(shù)： | 38/45頁 |
| 文件大小： | 1145K |
| 代理商： | AM29F016D-150EEB |
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Am29F016D
37
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 5.0 V V
CC
, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2.
Under worst case conditions of 90°C, V
CC
= 4.5 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then
does the device set DQ5 = 1. See the section on DQ5 for further information.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle sequence for programming. See Table 6 for further
information on command definitions.
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 5.0 Volt, one pin at a time.
TSOP AND SO PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25
°
C, f = 1.0 MHz.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
1
8
sec
Excludes 00h programming prior to
erasure (Note 4)
Chip Erase Time
32
256
sec
Byte Programming Time
7
300
μs
Excludes system-level overhead
(Note 5)
Chip Programming Time (Note 3)
14.4
43.2
sec
Min
Max
Input Voltage with respect to V
SS
on I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Conditions
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
7.5
9
pF
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°
C
10
Years
125
°
C
20
Years
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F016D-150EI | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F016D-150F4C | LM3370 Dual Synchronous Step-Down DC-DC Converter with Dynamic Voltage Scaling Function; Package: LLP; No of Pins: 16; Qty per Container: 1000; Container: Reel |
| AM29F016D-150F4E | LM3370 Dual Synchronous Step-Down DC-DC Converter with Dynamic Voltage Scaling Function; Package: LLP; No of Pins: 16; Qty per Container: 1000; Container: Reel |
| AM29F016D-150F4I | LM3370 Dual Synchronous Step-Down DC-DC Converter with Dynamic Voltage Scaling Function; Package: LLP; No of Pins: 16; Qty per Container: 1000; Container: Reel |
| AM29F016D-150FC | LM3370 Dual Synchronous Step-Down DC-DC Converter with Dynamic Voltage Scaling Function; Package: LLP; No of Pins: 16; Qty per Container: 1000; Container: Reel |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F016D-70E4D | 制造商:SOCO 功能描述: |
| AM29F016D-70E4F | 功能描述:閃存 16M (2MX8) 70ns 5v Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AM29F016D-70EF | 功能描述:閃存 16M (2MX8) 70ns 5v Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AM29F016D-70EI | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 16Mbit 2M x 8bit 70ns 48-Pin TSOP |
| AM29F016D70FI | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 16Mbit 2M x 8bit 70ns 48-Pin RTSOP |
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