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| 型號(hào)： | AM29F016D-150EI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| 中文描述： | 2M X 8 FLASH 5V PROM, 150 ns, PDSO48 |
| 封裝： | MO-142DD, TSOP-48 |
| 文件頁(yè)數(shù)： | 44/45頁(yè) |
| 文件大?。?/td> | 1145K |
| 代理商： | AM29F016D-150EI |
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43
Am29F016D
REVISION SUMMARY
Revision A (May 1997)
Initial release of Am29F016B (0.35 μm) device.
Revision B (January 1998)
Global
Made formatting and layout consistent with other data
sheets. Used updated common tables and diagrams.
Revision B+1 (January 1998)
AC Characteristics—Read-only Operations
Deleted note referring to output driver disable time.
Figure 16—Temporary Sector Group Unprotect
Timings
Corrected title to indicate “sector group.”
Revision B+2 (April 1998)
Global
Added -70 speed option, deleted -75 speed option.
Distinctive Characteristics
Changed minimum 100K write/erase cycles guaran-
teed to 1,000,000.
Ordering Information
Added extended temperature availability to -90, -120,
and -150 speed options.
Operating Ranges
Added extended temperature range.
DC Characteristics, CMOS Compatible
Corrected the CE# and RESET# test conditions for
I
CC3
and I
CC4
to V
CC
±0.5 V.
AC Characteristics
Erase/Program Operations; Erase and Program Oper-
ations Alternate CE# Controlled Writes:
Corrected the
notes reference for t
WHWH1
and t
WHWH2
. These param-
eters are 100% tested. Corrected the note reference for
t
VCS
. This parameter is not 100% tested.
Temporary Sector Unprotect Table
Added note reference for t
VIDR
. This parameter is not
100% tested.
Erase and Programming Performance
Changed minimum 100K program and erase cycles
guaranteed to 1,000,000.
Revision C (January 1999)
Global
Updated for CS39S process technology.
Distinctive Characteristics
Added:
I
20-year data retention at 125
°
C
— Reliable operation for the life of the system
DC Characteristics—CMOS Compatible
I
CC3
, I
CC4
: Added Note 4, “For CMOS mode only I
CC3
,
I
CC4
= 20 μA at extended temperature (>+85°C)”.
DC Characteristics—TTL/NMOS Compatible and
CMOS Compatible
I
CC1
, I
CC2
, I
CC3
, I
CC4
: Added Note 2 “Maximum I
CC
specifications are tested with V
CC
= V
CCmax
”.
I
CC3
,
I
CC4
: Deleted V
CC
= V
CC
Max.
Revision C+1 (March 23, 1999)
Operating Ranges
The temperature ranges are now specified as ambient.
Revision C+2 (May 17, 1999)
Product Selector Guide
Corrected the t
OE
specification for the -150 speed op-
tion to 55 ns.
Operating Ranges
V
CC
Supply Voltages
: Added “V
CC
for ± 5% devices .
+4.75 V to +5.25 V”.
Revision C+3 (July 2, 1999)
Global
Added references to availability of device in Known
Good Die (KGD) form.
Revision D (November 16, 1999)
AC Characteristics—Figure 11. Program
Operations Timing and Figure 12. Chip/Sector
Erase Operations
Deleted t
GHWL
and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
相關(guān)PDF資料 |
PDF描述 |
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| AM29F016D-150F4C | LM3370 Dual Synchronous Step-Down DC-DC Converter with Dynamic Voltage Scaling Function; Package: LLP; No of Pins: 16; Qty per Container: 1000; Container: Reel |
| AM29F016D-150F4E | LM3370 Dual Synchronous Step-Down DC-DC Converter with Dynamic Voltage Scaling Function; Package: LLP; No of Pins: 16; Qty per Container: 1000; Container: Reel |
| AM29F016D-150F4I | LM3370 Dual Synchronous Step-Down DC-DC Converter with Dynamic Voltage Scaling Function; Package: LLP; No of Pins: 16; Qty per Container: 1000; Container: Reel |
| AM29F016D-150FC | LM3370 Dual Synchronous Step-Down DC-DC Converter with Dynamic Voltage Scaling Function; Package: LLP; No of Pins: 16; Qty per Container: 1000; Container: Reel |
| AM29F016D-150FE | LM3370 Dual Synchronous Step-Down DC-DC Converter with Dynamic Voltage Scaling Function; Package: LLP; No of Pins: 16; Qty per Container: 4500; Container: Reel |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F016D-70E4D | 制造商:SOCO 功能描述: |
| AM29F016D-70E4F | 功能描述:閃存 16M (2MX8) 70ns 5v Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AM29F016D-70EF | 功能描述:閃存 16M (2MX8) 70ns 5v Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AM29F016D-70EI | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 16Mbit 2M x 8bit 70ns 48-Pin TSOP |
| AM29F016D70FI | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 16Mbit 2M x 8bit 70ns 48-Pin RTSOP |
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