參數(shù)資料
型號(hào)： Am29F016D-150SIB
廠商： Advanced Micro Devices, Inc.
元件分類： DC/DC變換器
英文描述： Evaluation Board for LM3370 Dual Synchronous Step-Down DC-DC Converter with Dynamic Voltage Scaling Function;
中文描述： 16兆位（2米× 8位）的CMOS 5.0伏只，統(tǒng)一部門快閃記憶體
文件頁數(shù)： 14/45頁
文件大?。?/td> 1145K
代理商： AM29F016D-150SIB
Am29F016D
13
Once V
ID
is removed from the RESET# pin, all the
previously protected sector groups are
protected again. Figure 1 shows the algorithm, and
the Temporary Sector Group Unprotect diagram (Fig-
ure 16) shows the timing waveforms, for this feature.
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to the Command Defi-
nitions table). In addition, the following hardware data
protection measures prevent accidental erasure or pro-
gramming, which might otherwise be caused by spuri-
ous system level signals during V
CC
power-up and
power-down transitions, or from system noise.
Low V
CC
Write Inhibit
When V
CC
is less than V
LKO
, the device does not ac-
cept any write cycles. This protects data during V
CC
power-up and power-down. The command register and
all internal program/erase circuits are disabled, and the
device resets. Subsequent writes are ignored until V
CC
is greater than V
LKO
. The system must provide the
proper signals to the control pins to prevent uninten-
tional writes when V
CC
is greater than V
LKO
.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or
WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE#
= V
IL
, CE# = V
IH
or WE# = V
IH
. To initiate a write cy-
cle, CE# and WE# must be a logical zero while OE#
is a logical one.
Power-Up Write Inhibit
If WE# = CE# = V
IL
and OE# = V
IH
during power up, the
device does not accept commands on the rising edge
of WE#. The internal state machine is automatically
reset to reading array data on power-up.
START
Perform Erase or
Program Operations
RESET# = V
IH
Temporary
Sector Group Unprotect
Completed (Note 2)
RESET# = V
ID
(Note 1)
Notes:
1. All protected sector groups unprotected.
2. All previously protected sector groups are protected
once again.
Figure 1.
Temporary Sector Group Unprotect
Operation
相關(guān)PDF資料
PDF描述
AM29F016D-70E4C LM3370 Dual Synchronous Step-Down DC-DC Converter with Dynamic Voltage Scaling Function; Package: MICRO SMD; No of Pins: 20; Qty per Container: 250; Container: Reel
AM29F016D-90EI 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F016D-90F4C LM337L 3-Terminal Adjustable Regulator; Package: TO-92; No of Pins: 3; Qty per Container: 1800; Container: Box
AM29F016D-90F4E LM137/LM337 3-Terminal Adjustable Negative Regulators; Package: TO-220; No of Pins: 3; Qty per Container: 45; Container: Rail
AM29F016D-90F4I 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F016D-70E4D 制造商:SOCO 功能描述:
AM29F016D-70E4F 功能描述:閃存 16M (2MX8) 70ns 5v Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
AM29F016D-70EF 功能描述:閃存 16M (2MX8) 70ns 5v Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
AM29F016D-70EI 制造商:Spansion 功能描述:NOR Flash Parallel 5V 16Mbit 2M x 8bit 70ns 48-Pin TSOP
AM29F016D70FI 制造商:Spansion 功能描述:NOR Flash Parallel 5V 16Mbit 2M x 8bit 70ns 48-Pin RTSOP
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