參數(shù)資料
型號(hào)： AM29F017B-120E4C
英文描述： 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF3709ZS with Lead Free Packaging
中文描述： x8閃存EEPROM的
文件頁(yè)數(shù)： 34/39頁(yè)
文件大?。?/td> 728K
代理商： AM29F017B-120E4C
34
Am29F002B/Am29F002NB
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1.
Typical program and erase times assume the following conditions: 25×C, 5.0 V V
CC
, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, V
CC
= 4.5 V (4.75 V for ±5% devices), 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle sequence for the program command. See Table 5
for further information on command definitions.
6. The device has a minimum guaranteed erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 5.0 V, one pin at a time. RESET# not available on Am29F002NB.
TSOP PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
1
8
s
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
7
s
Byte Programming Time
7
300
μs
Excludes system level
overhead (Note 5)
Chip Programming Time (Note 3)
1.8
5.4
s
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
7.5
9
pF
相關(guān)PDF資料
PDF描述
AM29F017B-120E4E x8 Flash EEPROM
AM29F017B-120E4I x8 Flash EEPROM
AM29F017B-120F4C 30V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF3708L with Standard Packaging
AM29F017B-120F4E 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRLR8503 with Lead Free Packaging
AM29F017B-120F4I x8 Flash EEPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F017B-90EC 制造商:Advanced Micro Devices 功能描述:2M X 8 FLASH 5V PROM, 90 ns, PDSO48
AM29F017B-90FC 制造商:Advanced Micro Devices 功能描述:2M X 8 FLASH 5V PROM, 90 ns, PDSO48
AM29F017D-120EC 制造商:Spansion 功能描述:FLASH PARALLEL 5V 16MBIT 2MX8 120NS 48TSOP - Trays
AM29F017D-70FI 制造商:Spansion 功能描述:FLASH PARALLEL 5V 16MBIT 2MX8 70NS 48TSOP - Trays
am29f017d-90fc/t 制造商:Advanced Micro Devices 功能描述:
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