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參數(shù)資料
| 型號： | AM29F040-120EE |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| 中文描述： | 512K X 8 FLASH 5V PROM, 120 ns, PDSO32 |
| 封裝： | TSOP-32 |
| 文件頁數(shù)： | 2/33頁 |
| 文件大?。?/td> | 446K |
| 代理商： | AM29F040-120EE |
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2
Am29F040
Any individual sector is typically erased and verified in
1.0 seconds (if already completely preprogrammed).
This device also features a sector erase architecture.
The sector mode allows for 64K byte blocks of memory
to be erased and reprogrammed without affecting
other blocks. The Am29F040 is erased when shipped
from the factory.
The device features single 5.0 V power supply opera-
tion for both read and write functions. Internally gener-
ated and regulated voltages are provided for the
program and erase operations. A low V
automatically inhibits write operations on the loss of
power. The end of program or erase is detected by Data
Polling of DQ7 or by the Toggle Bit feature on DQ6.
Once the end of a program or erase cycle has been
completed, the device internally resets to the read
mode.
CC
detector
AMD’s Flash technology combines years of EPROM
and E
PROM experience to produce the highest levels
of quality, reliability and cost effectiveness. The
Am29F040 memory electrically erases the entire chip
or all bits within a sector simultaneously via Fowler-
Nordheim tunneling. The bytes are programmed one
byte at a time using the EPROM programming
mechanism of hot electron injection.
2
Flexible Sector-Erase Architecture
Eight 64 Kbyte sectors
Individual-sector, multiple-sector, or bulk-erase
capability
Individual or multiple-sector protection is user
definable
I
I
I
7FFFFh
6FFFFh
5FFFFh
64 Kbytes per Sector
4FFFFh
3FFFFh
2FFFFh
1FFFFh
0FFFFh
00000h
17113E-1
相關PDF資料 |
PDF描述 |
|---|---|
| AM29F040-120EI | 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F040-120FC | 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F040-120FCB | 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F040-120FE | 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F040-120FEB | 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F040-120EI | 制造商:Advanced Micro Devices 功能描述: |
| AM29F040-120JC | 制造商:Advanced Micro Devices 功能描述: 制造商:Advanced Micro Devices 功能描述:NOR Flash, 512K x 8, 32 Pin, Plastic, PLCC |
| AM29F040-150JC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F040-70EC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 512K x 8, 32 Pin, Plastic, TSSOP |
| AM29F040-70JC | 制造商:Advanced Micro Devices 功能描述: |
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