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參數(shù)資料
| 型號(hào)： | AM29F040-120EIB |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| 中文描述： | 512K X 8 FLASH 5V PROM, 120 ns, PDSO32 |
| 封裝： | TSOP-32 |
| 文件頁(yè)數(shù)： | 21/33頁(yè) |
| 文件大?。?/td> | 446K |
| 代理商： | AM29F040-120EIB |
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Am29F040
21
AC CHARACTERISTICS
Read Only Operations Characteristics
Notes:
1.
Test Conditions (for -55):
Output Load: 1 TTL gate and 30 pF
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V to 3.0 V
Timing measurement reference level, input and output: 1.5 V and 1.5 V
Output Load: 1 TTL gate and 100 pF
Input rise and fall times: 20 ns
Input pulse levels: 0.45 V to 2.4 V
Timing measurement reference level, input and output: 0.8 V and 2.0 V
(for all others):
2. Output driver disable time.
3. Not 100% tested.
Parameter Symbols
Description
Test Setup
Speed Options (Note 1)
Unit
JEDEC
Standard
-55
-70
-90
-120
-150
t
AVAV
t
RC
Read Cycle Time (Note 3)
Min
55
70
90
120
150
ns
t
AVQV
t
ACC
Address to Output Delay
CE = V
IL
OE = V
IL
Max
55
70
90
120
150
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE = V
IL
Max
55
70
90
120
150
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max
30
30
35
50
55
ns
t
EHQZ
t
DF
Chip Enable to Output High Z
(Notes 2, 3)
Max
18
20
20
30
35
ns
t
GHQZ
t
DF
Output Enable to Output
High Z (Notes 2, 3)
18
20
20
30
35
ns
t
AXQX
t
OH
Output Hold Time from
Addresses, CE or OE,
Whichever Occurs First
Min
0
0
0
0
0
ns
2.7 k
Diodes = IN3064
or Equivalent
C
L
6.2 k
5.0 V
IN3064
or Equivalent
Device
Under
Test
17113E-13
Notes:
For –55: C
L
= 30 pF including jig capacitance
For all others: C
L
= 100 pF including jig capacitance
Figure 8.
Test Conditions
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F040-120EE | 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F040-120EI | 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F040-120FC | 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F040-120FCB | 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F040-120FE | 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F040-120JC | 制造商:Advanced Micro Devices 功能描述: 制造商:Advanced Micro Devices 功能描述:NOR Flash, 512K x 8, 32 Pin, Plastic, PLCC |
| AM29F040-150JC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F040-70EC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 512K x 8, 32 Pin, Plastic, TSSOP |
| AM29F040-70JC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F04090JC | 制造商:AMD 功能描述:29F04090JC AMD'93 S8K1A SMT |
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