參數(shù)資料
型號(hào): AM29F040-120LE
英文描述: x8 Flash EEPROM
中文描述: x8閃存EEPROM的
文件頁(yè)數(shù): 31/39頁(yè)
文件大?。?/td> 728K
代理商: AM29F040-120LE
Am29F002B/Am29F002NB
31
AC CHARACTERISTICS
Enter
Embedded
Erasing
Temporary Sector Unprotect (Am29F002B only)
Note:
Not 100% tested.
Parameter
All Speed Options
JEDEC
Std.
Description
Unit
t
VIDR
V
ID
Rise and Fall Time (See Note)
Min
500
ns
t
RSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
μs
Note:
The system may use CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an
erase-suspended sector.
Figure 15.
DQ2 vs. DQ6
Erase
Erase
Resume
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
Suspend
Program
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
RESET#
t
VIDR
12 V
0 or 5 V
CE#
WE#
RY/BY#
t
VIDR
t
RSP
Program or Erase Command Sequence
0 or 5 V
Figure 16.
Temporary Sector Unprotect Timing Diagram (Am29F002B only)
相關(guān)PDF資料
PDF描述
AM29F040-120LEB x8 Flash EEPROM
AM29F040-150DE x8 Flash EEPROM
AM29F040-150DEB 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRLR8721PBF with Standard Packaging
AM29F040-150LE x8 Flash EEPROM
AM29F040-150LEB x8 Flash EEPROM
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