參數(shù)資料
型號(hào)： AM29F040-120PC
廠(chǎng)商： ADVANCED MICRO DEVICES INC
元件分類(lèi)： PROM
英文描述： 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
中文描述： 512K X 8 FLASH 5V PROM, 120 ns, PDIP32
封裝： PLASTIC, DIP-32
文件頁(yè)數(shù)： 9/33頁(yè)
文件大?。?/td> 446K
代理商： AM29F040-120PC
Am29F040
9
Table 4.
Am29F040 Command Definitions
Notes:
1. Address bits A15, A16, A17, and A18 = X = Don’t Care for all address commands except for Program Address (PA), Sector
Address (SA), Read Address (RA), and autoselect sector protect verify.
2. Bus operations are defined in Table 1.
3. RA = Address of the memory location to be read.
PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of the WEpulse.
SA = Address of the sector to be erased. The combination of A18, A17, A16 will uniquely select any sector (see Table 3).
4. RD = Data read from location RA during read operation.
PD = Data to be programmed at location PA. Data is latched on the rising edge of WE
5. Read from non-erasing sectors is allowed in the Erase Suspend mode.
Read/Reset Command
The read or reset operation is initiated by writing the
read/reset command sequence into the command reg-
ister. Microprocessor read cycles retrieve array data
from the memory. The device remains enabled for
reads until the command register contents are altered.
The device will automatically power-up in the read/
reset state. In this case, a command sequence is not
required to read data. Standard microprocessor read
cycles will retrieve array data. This default value en-
sures that no spurious alteration of the memory content
occurs during the power transition. Refer to the AC
Read Characteristics and Waveforms for the specific
timing parameters.
Autoselect Command
Flash memories are intended for use in applications
where the local CPU alters memory contents. As such,
manufacture and device codes must be accessible
while the device resides in the target system. PROM
programmers typically access the signature codes by
raising A9 to a high voltage. However, multiplexing high
voltage onto the address lines is not generally desired
system design practice.
The device contains a command autoselect operation
to supplement traditional PROM programming method-
ology. The operation is initiated by writing the auto-
select command sequence into the command register.
Following the command write, a read cycle from ad-
dress XX00H retrieves the manufacture code of 01H. A
read cycle from address XX01H returns the device
code A4H (see Table 2). All manufacturer and device
codes will exhibit odd parity with the MSB (DQ7)
defined as the parity bit.
Scanning the sector addresses (A16, A17, A18) while
(A6, A1, A0) = (0, 1, 0) will produce a logical “1” at
device output DQ0 for a protected sector.
To terminate the operation, it is necessary to write the
read/reset command sequence into the register.
Byte Programming
The device is programmed on a byte-by-byte basis.
Programming is a four bus cycle operation. There are
two “unlock” write cycles. These are followed by the
program setup command and data write cycles. Ad-
dresses are latched on the falling edge of CE or WE,
whichever happens later and the data is latched on the
rising edge of CE or WE, whichever happens first. The
Command
Sequence
Read/Reset
Bus
Write
Cycles
Req’d
First Bus
Write Cycle
Second Bus
Write Cycle
Third Bus
Write Cycle
Fourth Bus
Read/Write
Cycle
Fifth Bus
Write Cycle
Sixth Bus
Write Cycle
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Read/Reset
1
XXXXH
F0H
Read/Reset
4
5555H
AAH 2AAAH
55H
5555H
F0H
RA
RD
Autoselect
4
5555H
AAH 2AAAH
55H
5555H
90H
00H
01H
01H
A4H
Byte Program
4
5555H
AAH 2AAAH
55H
5555H
A0H
PA
PD
Chip Erase
6
5555H
AAH 2AAAH
55H
5555H
80H
5555H
AAH
2AAAH
55H
5555H
10H
Sector Erase
6
5555H
AAH 2AAAH
55H
5555H
80H
5555H
AAH
2AAAH
55H
SA
30H
Sector Erase Suspend
Erase can be suspended during sector erase with Addr (don’t care), Data (B0H)
Sector Erase Resume
Erase can be resumed after suspend with Addr (don’t care), Data (30H)
相關(guān)PDF資料
PDF描述
AM29F040-120EC 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-120ECB 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-120PCB 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-120PE 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-120PEB 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
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