參數(shù)資料
型號(hào): AM29F040-150EIB
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
中文描述: 512K X 8 FLASH 5V PROM, 150 ns, PDSO32
封裝: TSOP-32
文件頁(yè)數(shù): 26/33頁(yè)
文件大?。?/td> 446K
代理商: AM29F040-150EIB
26
Am29F040
AC CHARACTERISTICS
Write/Erase/Program Operations
Alternate CE Controlled Writes
Notes:
1. This does not include the preprogramming time.
2. Not 100% tested.
Parameter Symbols
Description
Speed Options
Unit
JEDEC
Standard
-55
-70
-90
-120
-150
t
AVAV
t
WC
Write Cycle Time (Note 2)
Min
55
70
90
120
150
ns
t
AVEL
t
AS
Address Setup Time
Min
0
0
0
0
0
ns
t
ELAX
t
AH
Address Hold Time
Min
40
45
45
50
50
ns
t
DVEH
t
DS
Data Setup Time
Min
25
30
45
50
50
ns
t
EHDX
t
DH
Data Hold Time
Min
0
0
0
0
0
ns
t
OES
Output Enable Setup Time
Min
0
0
0
0
0
ns
t
OEH
Output
Enable
Hold
Time
Read (Note 2)
Min
0
0
0
0
0
ns
Toggle and Data Polling
(Note 2)
Min
10
10
10
10
10
ns
t
GHEL
t
GHEL
Read Recover Time Before Write
Min
0
0
0
0
0
ns
t
WLEL
t
WS
WE Setup Time
Min
0
0
0
0
0
ns
t
EHWH
t
WH
WE Hold Time
Min
0
0
0
0
0
ns
t
ELEH
t
CP
CE Pulse Width
Min
30
35
45
50
50
ns
t
EHEL
t
CPH
CE Pulse Width High
Min
20
20
20
20
20
ns
t
WHWH1
t
WHWH1
Byte Programming Operation
Typ
7
7
7
7
7
μ
s
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 1)
Typ
1
1
1
1
1
sec
Max
8
8
8
8
8
sec
t
WHWH3
t
WHWH3
Chip Erase Operation (Note 1)
Typ
8
8
8
8
8
sec
Max
64
64
64
64
64
sec
t
VCS
V
CC
Setup Time (Note 2)
Min
30
50
50
50
50
μ
s
相關(guān)PDF資料
PDF描述
AM29F040-120EEB 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-120EIB 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-120EE 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-120EI 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-120FC 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
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