參數(shù)資料
型號(hào): AM29F040-55FCB
廠商: Advanced Micro Devices, Inc.
英文描述: 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
中文描述: 4兆位(524,288 × 8位)的CMOS 5.0伏只,扇區(qū)擦除閃存
文件頁(yè)數(shù): 15/33頁(yè)
文件大?。?/td> 446K
代理商: AM29F040-55FCB
Am29F040
15
EMBEDDED ALGORITHMS
Start
Erasure Completed
Write Erase Command Sequence
(see below)
Data Polling or Toggle Bit
Successfully Completed
5555H/AAH
2AAAH/55H
5555H/80H
Chip Erase Command Sequence
(Address/Command):
5555H/AAH
2AAAH/55H
5555H/10H
5555H/AAH
2AAAH/55H
5555H/80H
Individual Sector/Multiple Sector
Erase Command Sequence
(Address/Command):
5555H/AAH
Sector Address/30H
Sector Address/30H
Sector Address/30H
2AAAH/55H
Additional sector
erase commands
are optional
17113E-8
Figure 2.
Embedded Erase Algorithm
相關(guān)PDF資料
PDF描述
AM29F040-55FEB 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-55FIB 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F080B-120ED 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-70ED 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-70EE 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
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