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參數(shù)資料
| 型號： | AM29F040-55FEB |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| 中文描述： | 4兆位（524,288 × 8位）的CMOS 5.0伏只，扇區(qū)擦除閃存 |
| 文件頁數(shù)： | 7/33頁 |
| 文件大?。?/td> | 446K |
| 代理商： | AM29F040-55FEB |
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Am29F040
7
Table 1.
Am29F040 User Bus Operations
Legend:
L = Logic 0, H = Logic 1, X = Don’t Care. See DC Characteristics for voltage levels.
Notes:
1. Manufacturer and device codes may also be accessed via a command register write sequence. Refer to Tables 2 and 4.
2. Refer to Table 3 for valid PD (Program Data) during a write operation.
3. Refer to the section on Sector Protection.
4. WE can be V
IL
if OE is V
IL
, OE at V
IH
initiates the write operations.
Read Mode
The Am29F040 has two control functions which must
be satisfied in order to obtain data at the outputs. CE is
the power control and should be used for device selec-
tion. OE is the output control and should be used to
gate data to the output pins if a device is selected.
Address access time (t
stable addresses to valid output data. The chip enable
access time (t
CE
) is the delay from stable addresses and
stable CE to valid data at the output pins. The output en-
able access time is the delay from the falling edge of OE
to valid data at the output pins (assuming the addresses
have been stable for at least t
Standby Mode
The Am29F040 has two standby modes, a CMOS
standby mode (CE input held at V
current consumed is less than 5
mode (CE is held at V
IH
) when the current required is
reduced to approximately 1 mA. In the standby mode
the outputs are in a high impedance state, independent
of the OE input.
ACC
) is equal to the delay from
ACC
–t
OE
time).
CC
μ
A; and a TTL standby
±
0.5 V), when the
If the device is deselected during erasure or program-
ming, the device will draw active current until the
operation is completed.
Output Disable
With the OE input at a logic high level (V
the device is disabled. This will cause the output pins to
be in a high impedance state.
Autoselect
The autoselect mode allows the reading out of a binary
code from the device and will identify its manufacturer
and type. This mode is intended for use by programming
equipment for the purpose of automatically matching the
device to be programmed with its corresponding pro-
gramming algorithm. This mode is functional over the
entire temperature range of the device.
IH
), output from
To activate this mode, the programming equipment
must force V
ID
(11.5 V to 12.5 V) on address pin A9.
Two identifier bytes may then be sequenced from the
device outputs by toggling address A0 from V
All addresses are don’t cares except A0, A1, and A6.
IL
to V
IH
.
The manufacturer and device codes may also be read
via the command register, for instances when the
Am29F040 is erased or programmed in a system with-
out access to high voltage on the A9 pin. The command
sequence is illustrated in Table 4 (refer to Autoselect
Command section).
Byte 0 (A0 = V
(AMD = 01H) and byte 1 (A0 = V
code (Am29F040 = A4H). All identifiers for manufac-
turer and device exhibit odd parity with the MSB (DQ7)
defined as the parity bit. See Table 2.
IL
) represents the manufacturer’s code
) the device identifier
IH
Operation
CE
OE
WE
A0
A1
A6
A9
I/O
Autoselect Manufacturer Code (Note 1)
L
L
H
L
L
L
V
ID
Code
Autoselect Device Code (Note 1)
L
L
H
H
L
L
V
ID
Code
Read (Note 4)
L
L
H
A0
A1
A6
A9
RD
Standby
H
X
X
X
X
X
X
HIGH Z
Output Disable
L
H
H
X
X
X
X
HIGH Z
Write
L
H
L
A0
A1
A6
A9
PD (Note 2)
Verify Sector Protect (Note 3)
L
L
H
L
H
L
V
ID
Code
Autoselect Device Unprotect Code
L
L
H
H
H
L
V
ID
Code
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PDF描述 |
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| AM29F040-55FIB | 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
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| AM29F080B-70EF | 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
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