參數(shù)資料
型號: AM29F040B-120EC
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
中文描述: 512K X 8 FLASH 5V PROM, 120 ns, PDSO32
封裝: MO-142BD, TSOP-32
文件頁數(shù): 27/33頁
文件大?。?/td> 446K
代理商: AM29F040B-120EC
Am29F040
27
SWITCHING WAVEFORMS
Notes:
1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at byte address.
3. DQ7 is the output of the complement of the data written to the device.
4. D
OUT
is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
Figure 14.
Alternate CE Controlled Program Operation Timings
D
OUT
PD
t
AH
Data Polling
t
DS
t
WS
t
CPH
t
DH
t
CP
t
GHEL
Addresses
WE
OE
CE
Data
5.0 V
DQ7
5555H
PA
A0H
PA
17113E-19
t
WC
t
AS
t
WHWH1
相關(guān)PDF資料
PDF描述
AM29F040B-120EE 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F040-55EC 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-55EEB 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-55EIB 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-55FCB 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
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