參數(shù)資料
型號(hào): AM29F040B-120EE
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
中文描述: 512K X 8 FLASH 5V PROM, 120 ns, PDSO32
封裝: MO-142BD, TSOP-32
文件頁(yè)數(shù): 24/33頁(yè)
文件大小: 446K
代理商: AM29F040B-120EE
24
Am29F040
SWITCHING WAVEFORMS
Notes:
1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at byte address.
3. DQ7 is the output of the complement of the data written to the device.
4. D
OUT
is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
Figure 10.
Program Operation Timings
Note:
SA is the sector address for Sector Erase. Addresses = don’t care for Chip Erase.
Figure 11.
AC Waveforms Chip/Sector Erase Operations
D
OUT
PD
t
AH
Data Polling
t
DF
t
OH
t
OE
t
DS
t
CS
t
WPH
t
DH
t
WP
t
GHWL
Addresses
CE
OE
WE
Data
5.0 V
DQ7
5555H
PA
A0H
PA
17113E-15
t
WC
t
RC
t
AS
t
WHWH1
t
CE
t
WP
t
CS
t
DH
5555H
2AAAH
SA
CE
OE
WE
Data
V
CC
AAH
55H
Addresses
2AAAH
t
VCS
t
DS
5555H
t
WPH
t
GHWL
t
AH
AAH
55H
80H
10H/30H
17113E-16
t
AS
5555H
相關(guān)PDF資料
PDF描述
AM29F040-55EC 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-55EEB 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-55EIB 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-55FCB 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-55FEB 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
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