參數(shù)資料
型號(hào)： AM29F040B-70FE
廠商： ADVANCED MICRO DEVICES INC
元件分類： PROM
英文描述： 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
中文描述： 512K X 8 FLASH 5V PROM, 70 ns, PDSO32
封裝： REVERSE, MO-142BD, TSOP-32
文件頁(yè)數(shù)： 7/38頁(yè)
文件大?。?/td> 1127K
代理商： AM29F040B-70FE
July 18, 2005
Am29F040B
13
The system can monitor DQ3 to determine if the sector
erase timer has timed out. (See the “DQ3: Sector Erase
Timer” section.) The time-out begins from the rising
edge of the final WE# pulse in the command sequence.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other commands
are ignored.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses are
no longer latched. The system can determine the sta-
tus of the erase operation by using DQ7, DQ6, or DQ2.
Refer to “Write Operation Status” for information on
these status bits.
Figure 2 illustrates the algorithm for the erase opera-
tion. Refer to the Erase/Program Operations tables in
the “AC Characteristics” section for parameters, and to
the Sector Erase Operations Timing diagram for timing
waveforms.
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system to in-
terrupt a sector erase operation and then read data
from, or program data to, any sector not selected for
erasure. This command is valid only during the sector
erase operation, including the 50 s time-out period
during the sector erase command sequence. The
Erase Suspend command is ignored if written during
the chip erase operation or Embedded Program algo-
rithm. Writing the Erase Suspend command during the
Sector Erase time-out immediately terminates the
time-out period and suspends the erase operation. Ad-
dresses are “don’t-cares” when writing the Erase
Suspend command.
When the Erase Suspend command is written during a
sector erase operation, the device requires a maximum
of 20 s to suspend the erase operation. However,
when the Erase Suspend command is written during
the sector erase time-out, the device immediately ter-
minates the time-out period and suspends the erase
operation.
After the erase operation has been suspended, the
system can read array data from or program data to
any sector not selected for erasure. (The device “erase
suspends” all sectors selected for erasure.) Normal
read and write timings and command definitions apply.
Reading at any address within erase-suspended sec-
tors produces status data on DQ7–DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine
if a sector is actively erasing or is erase-suspended.
See “Write Operation Status” for information on these
status bits.
After an erase-suspended program operation is com-
plete, the system can once again read array data within
non-suspended sectors. The system can determine
the status of the program operation using the DQ7 or
DQ6 status bits, just as in the standard program oper-
ation. S ee “Wr i te Ope ration Statu s” for m or e
information.
The system may also write the autoselect command
sequence when the device is in the Erase Suspend
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another
for more information.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend
mode and continue the sector erase operation. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the de-
vice has resumed erasing.
Notes:
1. See the appropriate Command Definitions table for erase
command sequence.
2. See “DQ3: Sector Erase Timer” for more information.
Figure 2.
Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh?
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
相關(guān)PDF資料
PDF描述
AM29F040B-70FI 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Am29F040B-70EI 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Am29F040B-70JC 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Am29F040B-70JE 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Am29F040B-70JI 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F040B-70JC 制造商:Advanced Micro Devices 功能描述:NOR Flash, 512K x 8, 32 Pin, Plastic, PLCC
AM29F040B-70JD 制造商:Spansion 功能描述:IC SM FLASH 5V 4MB
AM29F040B-70JD 制造商:Spansion 功能描述:FLASH MEMORY IC
AM29F040B-70JF 功能描述:閃存 4M (512Kx8) 70ns 5v Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
AM29F040B-70JF 制造商:Spansion 功能描述:FLASH MEMORY IC
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