參數(shù)資料
型號: Am29F040B-70PC
廠商: Advanced Micro Devices, Inc.
英文描述: 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
中文描述: 4兆位(512畝× 8位)的CMOS 5.0伏只,統(tǒng)一部門快閃記憶體
文件頁數(shù): 17/30頁
文件大?。?/td> 403K
代理商: AM29F040B-70PC
24
Am29F040B
P R E L I M I NARY
AC CHARACTERISTICS
Erase and Program Operations
Alternate CE# Controlled Writes
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
Note: Both DQ6 and DQ2 toggle with OE# or CE#. See the text on DQ6 and DQ2 in the “Write Operation Status” section for more
information.
21445B-18
Figure 13.
DQ2 vs. DQ6
Enter
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
WE#
DQ6
DQ2
DQ2 and DQ6 toggle with OE# and CE#
Erase
Complete
Erase
Suspend
Program
Resume
Embedded
Erasing
Parameter Symbols
Description
Speed Options
Unit
JEDEC
Standard
-55
-70
-90
-120
-150
tAVAV
tWC
Write Cycle Time (Note 1)
Min
55
70
90
120
150
ns
tAVEL
tAS
Address Setup Time
Min
0
ns
tELAX
tAH
Address Hold Time
Min
40
45
50
ns
tDVEH
tDS
Data Setup Time
Min
25
30
45
50
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tGHEL
Read Recover Time Before Write
Min
0
ns
tWLEL
tWS
CE# Setup Time
Min
0
ns
tEHWH
tWH
CE# Hold Time
Min
0
ns
tELEH
tCP
Write Pulse Width
Min
30
35
45
50
ns
tEHEL
tCPH
Write Pulse Width High
Min
20
ns
tWHWH1
Byte Programming Operation
Typ
7
s
tWHWH2
Sector Erase Operation
Typ
1
sec
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