參數(shù)資料
型號(hào): AM29F040B-90PE
廠商: Advanced Micro Devices, Inc.
英文描述: 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
中文描述: 4兆位(512畝× 8位)的CMOS 5.0伏只,統(tǒng)一部門(mén)快閃記憶體
文件頁(yè)數(shù): 18/36頁(yè)
文件大小: 534K
代理商: AM29F040B-90PE
16
Am29F040B
21445E5
November 1, 2006
D A T A S H E E T
The DQ5 failure condition may appear if the system
tries to program a “1” to a location that is previously pro-
grammed to “0.”
Only an erase operation can change
a “0” back to a “1.”
Under this condition, the device
halts the operation, and when the operation has ex-
ceeded the timing limits, DQ5 produces a “1.”
Under both these conditions, the system must issue the
reset command to return the device to reading array
data.
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not an
erase operation has begun. (The sector erase timer
does not apply to the chip erase command.) If addi-
tional sectors are selected for erasure, the entire time-
out also applies after each additional sector erase com-
mand. When the time-out is complete, DQ3 switches
from “0” to “1.” The system may ignore DQ3 if the sys-
tem can guarantee that the time between additional
sector erase commands is always less than 50 μs. See
also the
“Sector Erase Command Sequence”
section.
After the sector erase command sequence is written,
the system should read the status on DQ7 (Data# Poll-
ing) or DQ6 (Toggle Bit I) to ensure the device has
accepted the command sequence, and then read DQ3.
If DQ3 is “1”, the internally controlled erase cycle has
begun; all further commands (other than Erase Sus-
pend) are ignored until the erase operation is complete.
If DQ3 is “0”, the device accepts additional sector erase
commands. To ensure the command has been ac-
cepted, the system software should check the status of
DQ3 prior to and following each subsequent sector
erase command. If DQ3 is high on the second status
check, the last command might not have been ac-
cepted. Table
5
shows the outputs for DQ3.
START
No
Yes
Yes
DQ5 = 1
No
Yes
Toggle Bit
= Toggle
No
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Read DQ7–DQ0
Toggle Bit
= Toggle
Read DQ7–DQ0
Twice
Read DQ7–DQ0
Notes:
1. Read toggle bit twice to determine whether or not it is
toggling. See text.
2. Recheck toggle bit because it may stop toggling as DQ5
changes to “1”. See text.
Figure 4. Toggle Bit Algorithm
(Notes
1
,
2
)
(Note
1)
相關(guān)PDF資料
PDF描述
AM29F040B-90PF 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F040B-90PI 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F040B-90PK 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F040 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040B-1 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F040B-90PF 制造商:Spansion 功能描述:IC 5V 4M BIT FLASH SECTOR CS39
AM29F080B-120EC 制造商:Advanced Micro Devices 功能描述:
AM29F080B-120EF 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M x 8bit 120ns 40-Pin TSOP
AM29F080B-120SC 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,1MX8,CMOS,SOP,44PIN,PLASTIC
AM29F080B-120SC/T 制造商:Spansion 功能描述:FLASH PARALLEL 5V 8MBIT 1MX8 120NS 44SOIC - Rail/Tube