參數(shù)資料
型號: AM29F040B-90PI
廠商: Advanced Micro Devices, Inc.
英文描述: 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
中文描述: 4兆位(512畝× 8位)的CMOS 5.0伏只,統(tǒng)一部門快閃記憶體
文件頁數(shù): 10/36頁
文件大?。?/td> 534K
代理商: AM29F040B-90PI
8
Am29F040B
21445E5
November 1, 2006
D A T A S H E E T
outputs are placed in the high impedance state, inde-
pendent of the OE# input.
The device enters the CMOS standby mode when the
CE# pin is held at V
CC
±
0.5 V. (Note that this is a more
restricted voltage range than V
IH
.) The device enters
the TTL standby mode when CE# is held at V
IH
. The
device requires the standard access time (t
CE
) before it
is ready to read data.
If the device is deselected during erasure or program-
ming, the device draws active current until the
operation is completed.
I
CC3
in the DC Characteristics tables represents the
standby current specification.
Output Disable Mode
When the OE# input is at V
IH
, output from the device is
disabled. The output pins are placed in the high imped-
ance state.
Table 2. Sector Addresses Table
Note:
All sectors are 64 Kbytes in size.
Sector
A18
A17
A16
Address Range
SA0
0
0
0
00000h–0FFFFh
SA1
0
0
1
10000h–1FFFFh
SA2
0
1
0
20000h–2FFFFh
SA3
0
1
1
30000h–3FFFFh
SA4
1
0
0
40000h–4FFFFh
SA5
1
0
1
50000h–5FFFFh
SA6
1
1
0
60000h–6FFFFh
SA7
1
1
1
70000h–7FFFFh
相關PDF資料
PDF描述
AM29F040B-90PK 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F040 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040B-1 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F040-55JEB 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-150EIB 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
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