參數(shù)資料
型號： AM29F080B-120ED
廠商： Advanced Micro Devices, Inc.
英文描述： 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
中文描述： 8兆位（1米× 8位）的CMOS 5.0伏只，統(tǒng)一部門快閃記憶體
文件頁數(shù)： 23/39頁
文件大?。?/td> 517K
代理商： AM29F080B-120ED
November1,2006 21503G5
Am29F080B
21
D AT A S H E E T
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –65
°
C to +125
°
C
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . –55
°
C to +125
°
C
Voltage with Respect to Ground
V
CC
(Note 1) . . . . . . . . . . . . . . . .–2.0 V to +7.0 V
A9, OE#, RESET# (Note 2). . . .–2.0 V to +12.5 V
All other pins (Note 1) . . . . . . . . .–2.0 V to +7.0 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V. During
voltage transitions, inputs may overshoot V
SS
to –2.0 V
for periods of up to 20 ns. See Figure 6. Maximum DC
voltage on output and I/O pins is V
CC
+ 0.5 V. During
voltage transitions, outputs may overshoot to V
CC
+ 2.0 V
for periods up to 20 ns. See Figure 7.
2. Minimum DC input voltage on A9, OE#, RESET# pins is
–0.5V. During voltage transitions, A9, OE#, RESET# pins
may overshoot V
SS
to –2.0 V for periods of up to 20 ns.
See Figure 6. Maximum DC input voltage on A9, OE#,
and RESET# is 12.5 V which may overshoot to 13.5 V for
periods up to 20 ns.
3. No more than one output shorted at a time. Duration of
the short circuit should not be greater than one second.
Stresses greater than those listed in this section may cause
permanent damage to the device. This is a stress rating only;
functional operation of the device at these or any other condi-
tions above those indicated in the operational sections of this
specification is not implied. Exposure of the device to absolute
maximum rating conditions for extended periods may affect
device reliability.
OPERATING RANGES
Commercial (C) Devices
Ambient Temperature (T
A
) . . . . . . . . . . . 0
°
C to +70
°
C
Industrial (I) Devices
Ambient Temperature (T
A
) . . . . . . . . . –40
°
C to +85
°
C
Extended (E) Devices
Ambient Temperature (T
A
) . . . . . . . . –55
°
C to +125
°
C
V
CC
Supply Voltages
V
CC
for ± 5% devices. . . . . . . . . . .+4.75 V to +5.25 V
V
CC
for± 10% devices . . . . . . . . . . . .+4.5 V to +5.5 V
Operating ranges define those limits between which the
functionality of the device is guaranteed.
20 ns
20 ns
+0.8 V
–0.5 V
20 ns
–2.0 V
Figure 6.
Maximum Negative
Overshoot Waveform
20 ns
20 ns
V
CC
+2.0 V
V
CC
+0.5 V
20 ns
2.0 V
Figure 7.
Maximum Negative
Overshoot Waveform
相關(guān)PDF資料
PDF描述
AM29F080B-70ED 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-70EE 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-70EF 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-70EK 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-70SD 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F080B-120EF 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M x 8bit 120ns 40-Pin TSOP
AM29F080B-120SC 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,1MX8,CMOS,SOP,44PIN,PLASTIC
AM29F080B-120SC/T 制造商:Spansion 功能描述:FLASH PARALLEL 5V 8MBIT 1MX8 120NS 44SOIC - Rail/Tube
AM29F080B-55EF 功能描述:閃存 8M (1MX8) 55ns 5v Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
AM29F080B-70EC 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,1MX8,CMOS,TSSOP,40PIN,PLASTIC
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