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參數(shù)資料
| 型號： | AM29F080B-90SD |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| 中文描述： | 8兆位（1米× 8位）的CMOS 5.0伏只，統(tǒng)一部門快閃記憶體 |
| 文件頁數(shù)： | 3/39頁 |
| 文件大小： | 517K |
| 代理商： | AM29F080B-90SD |
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DATA SHEET
This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
21503
Issue Date:
November 1, 2006
Rev:
G
Amendment:
5
Am29F080B
8 Megabit (1 M x 8-Bit)
CMOS 5.0 Volt-only, Uniform Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
■
5.0 V
±
10%, single power supply operation
— Minimizes system level power requirements
■
Manufactured on 0.32 μm process technology
— Compatible with 0.5 μm Am29F080 device
■
High performance
— Access times as fast as 55 ns
■
Low power consumption
— 25 mA typical active read current
— 30 mA typical program/erase current
— 1 μA typical standby current (standard access
time to active mode)
■
Flexible sector architecture
— 16 uniform sectors of 64 Kbytes each
— Any combination of sectors can be erased.
— Supports full chip erase
— Group sector protection:
A hardware method of locking sector groups to
prevent any program or erase operations within
that sector group
Temporary Sector Group Unprotect allows code
changes in previously locked sectors
■
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies bytes at specified addresses
■
Minimum 1,000,000 program/erase cycles per
sector guaranteed
■
20-year data retention at 125
°
C
— Reliable operation for the life of the system
■
Package options
— 40-pin TSOP
— 44-pin SO
■
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply Flash standard
— Superior inadvertent write protection
■
Data# Polling and toggle bits
— Provides a software method of detecting program
or erase cycle completion
■
Ready/Busy# output (RY/BY#)
— Provides a hardware method for detecting
program or erase cycle completion
■
Erase Suspend/Erase Resume
— Suspends a sector erase operation to read data
from, or program data to, a non-erasing sector,
then resumes the erase operation
■
Hardware reset pin (RESET#)
— Resets internal state machine to the read mode
■
Command sequence optimized for mass storage
— Specific addresses not required for unlock cycles
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F080B-90SF | 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F080B-90SK | 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F080B-120EF | 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F080B-120EK | 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F080B-120SD | 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F080B-90SD | 制造商:Spansion 功能描述:FLASH 8MB SMD 29F080 SOIC44 |
| AM29F080B-90SF | 制造商:Spansion 功能描述: 制造商:Spansion 功能描述:IC, FLASH MEM, 8MBIT, 90NS, 44-SOIC, Memory Type:Flash - NOR, Memory Size:8Mbit, |
| AM29F080B-90SI | 制造商:Advanced Micro Devices 功能描述: |
| AM29F100B120EC | 制造商:AMD 功能描述:* |
| AM29F100B-120EC | 制造商:Advanced Micro Devices 功能描述: |
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