參數(shù)資料
型號： AM29F080B-90SK
廠商： Advanced Micro Devices, Inc.
英文描述： 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
中文描述： 8兆位（1米× 8位）的CMOS 5.0伏只，統(tǒng)一部門快閃記憶體
文件頁數(shù)： 38/39頁
文件大?。?/td> 517K
代理商： AM29F080B-90SK
36
Am29F080B
21503G5 November1,2006
D AT A S H E E T
REVISION SUMMARY
Revision A (July 1997)
Initial release.
Revision B (January 1998)
Global
Formatted for consistency with other 5.0 volt-only
data sheets.
Figure 9, Read Operation Timings
Corrected RESET# waveform so that it is high for the
duration of the read cycle.
Figure 11, Chip/Sector Erase Operation Timings
Corrected data unlock cycle in diagram to 55h.
Figure 17, Alternate CE# Controlled Program
Operation Timings
Corrected command for sector erase to 30h, chip erase
to 10h.
Revision C (January 1998)
Standby Mode
Removed sentence in first paragraph referring to
RESET# pulse.
Sector Group Protection/Unprotection, Temporary
Sector Group Unprotect
Changed references from “sector” to “sector group”.
Corrected text to indicate sector groups are composed
of two adjacent sectors.
Revision D (May 1998)
Distinctive Characteristics
Changed minimum 100K write/erase cycles guaran-
teed to 1,000,000.
DC Characteristics, CMOS Compatible
For I
CC3
and I
CC4
, the voltage tolerances given for CE#
and RESET# are now ±0.5 V.
AC Characteristics
Erase/Program Operations; Erase and Program Oper-
ations Alternate CE# Controlled Writes:
Corrected the
notes reference for t
WHWH1
and t
WHWH2
. These param-
eters are 100% tested. Corrected the note reference for
t
VCS
. This parameter is not 100% tested.
Temporary Sector Unprotect Table
Added note reference for t
VIDR
. This parameter is not
100% tested.
Command Definitions
Corrected the shift in the table header.
Erase and Programming Performance
Changed minimum 100K program and erase cycles
guaranteed to 1,000,000.
Revision E (January 1999)
Global
Updated for CS39S process technology.
Distinctive Characteristics
Added:
■
20-year data retention at 125
°
C
— Reliable operation for the life of the system
DC Characteristics—CMOS Compatible
Added note “For CMOS mode only, I
CC3
= I
CC4
= 20 μA
max at extended temperatures (> +85°C)
”
.
DC Characteristics—TTL/NMOS Compatible and
CMOS Compatible
I
CC1
, I
CC2
, I
CC3
,
I
CC4
: Added Note 2 “Maximum I
CC
specifications are tested with V
CC
= V
CCmax
”.
I
CC3
,
I
CC4
: Deleted V
CC
= V
CC
Max.
Revision E+1 (March 23, 1999)
Operating Ranges
The temperature ranges are now specified as ambient.
Revision E+2 (April 9, 1999)
Ordering Information, Operating Ranges
Added the extended temperature range.
Revision F (November 15, 1999)
AC Characteristics—Figure 11. Program
Operations Timing and Figure 12. Chip/Sector
Erase Operations
Deleted t
GHWL
and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision F+1 (May 18, 2000)
DC Characteristics
TTL/NMOS Compatible: The ICC2 specifications are
now identical to those for CMOS compatible.
Revision G (December 4, 2000)
Added table of contents.
Ordering Information
Deleted burn-in option.
相關(guān)PDF資料
PDF描述
AM29F080B-120EF 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-120EK 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-120SD 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-120SF 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-120SK 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
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