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參數(shù)資料
| 型號(hào)： | Am29F200AB-90DWE |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 |
| 中文描述： | 2兆位（256畝x 8-Bit/128畝x 16位），5.0伏的CMOS只，扇區(qū)閃存模修訂1 |
| 文件頁(yè)數(shù)： | 7/8頁(yè) |
| 文件大?。?/td> | 129K |
| 代理商： | AM29F200AB-90DWE |
1/13/98
Am29F200A Known Good Die
7
S U P P L E M E N T
PHYSICAL SPECIFICATIONS
Die dimensions . . . . . . . . . . . . . . 191 mils x 174 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . .4.85 mm x 4.42 mm
Die Thickness . . . . . . . . . . . . . . . . . . . . . . . . ~20 mils
Bond Pad Size . . . . . . . . . . . . . . 4.55 mils x 4.55 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . 115.6
μ
m x 115.6
μ
m
Pad Area Free of Passivation . . . . . . . . . .20.70 mils
2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13,363
μ
m
2
Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42
Bond Pad Metalization . . . . . . . . . . . . . . . . . . Al/Cu/Si
Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,
may be grounded (optional)
Passivation. . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride
DC OPERATING CONDITIONS
V
CC
(Supply Voltage). . . . . . . . . . . . . . .4.5 V to 5.5 V
Junction Temperature Under Bias . .T
J
(max) = 130
°
C
Operating Temperature
Commercial . . . . . . . . . . . . . . . . . . . 0
°
C to +70
°
C
Industrial . . . . . . . . . . . . . . . . . . .
–40
°
C to +85
°
C
Extended . . . . . . . . . . . . . . . . . . –55
°
C to +125
°
C
MANUFACTURING INFORMATION
Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . .FASL
Test . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SDC
Manufacturing ID (Top Boot) . . . . . . . . . . . .98483AK
(Bottom Boot) . . . . . . . .98483ABK
Preparation for Shipment . . . . . . . . Penang, Malaysia
Fabrication Process . . . . . . . . . . . . . . . . . . . CS29AF
Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
SPECIAL HANDLING INSTRUCTIONS
Processing
Do not expose KGD products to ultraviolet light or
process them at temperatures greater than 250
°
C.
Failure to adhere to these handling instructions will
result in irreparable damage to the devices. For best
yield, AMD recommends assembly in a Class 10K
clean room with 30% to 60% relative humidity.
Storage
Store at a maximum temperature of 30
°
C in a nitrogen-
purged cabinet or vacuum-sealed bag. Observe all
standard ESD handling procedures.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F200AB-90DWE1 | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 |
| Am29F200AB-90DWI | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 |
| AM29F200AT-120DTC1 | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 |
| Am29F200AT-120DTE | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 |
| Am29F200AT-120DTI | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F200AB-90SC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 128K x 16, 44 Pin, Plastic, SOP |
| AM29F200AB90SI | 制造商:AMD 功能描述:NEW |
| AM29F200AT-120EC | 制造商:Advanced Micro Devices 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 120ns 48-Pin TSOP |
| AM29F200AT55EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F200AT70SI | 制造商:AMD 功能描述:* |
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