參數(shù)資料
型號(hào)： Am29F200AT-120DPE
廠商： Advanced Micro Devices, Inc.
英文描述： 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1
中文描述： 2兆位（256畝x 8-Bit/128畝x 16位），5.0伏的CMOS只，扇區(qū)閃存模修訂1
文件頁(yè)數(shù)： 7/8頁(yè)
文件大?。?/td> 118K
代理商： AM29F200AT-120DPE
1/13/98
Am29F200A Known Good Die
7
S U P P L E M E N T
PHYSICAL SPECIFICATIONS
Die dimensions . . . . . . . . . . . . . . 191 mils x 174 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . .4.85 mm x 4.42 mm
Die Thickness . . . . . . . . . . . . . . . . . . . . . . . . ~20 mils
Bond Pad Size . . . . . . . . . . . . . . 4.55 mils x 4.55 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . 115.6
μ
m x 115.6
μ
m
Pad Area Free of Passivation . . . . . . . . . .20.70 mils
2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13,363
μ
m
2
Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42
Bond Pad Metalization . . . . . . . . . . . . . . . . . . Al/Cu/Si
Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,
may be grounded (optional)
Passivation. . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride
DC OPERATING CONDITIONS
V
CC
(Supply Voltage). . . . . . . . . . . . . . .4.5 V to 5.5 V
Junction Temperature Under Bias . .T
J
(max) = 130
°
C
Operating Temperature
Commercial . . . . . . . . . . . . . . . . . . . 0
°
C to +70
°
C
Industrial . . . . . . . . . . . . . . . . . . .
–40
°
C to +85
°
C
Extended . . . . . . . . . . . . . . . . . . –55
°
C to +125
°
C
MANUFACTURING INFORMATION
Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . .FASL
Test . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SDC
Manufacturing ID (Top Boot) . . . . . . . . . . . .98483AK
(Bottom Boot) . . . . . . . .98483ABK
Preparation for Shipment . . . . . . . . Penang, Malaysia
Fabrication Process . . . . . . . . . . . . . . . . . . . CS29AF
Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
SPECIAL HANDLING INSTRUCTIONS
Processing
Do not expose KGD products to ultraviolet light or
process them at temperatures greater than 250
°
C.
Failure to adhere to these handling instructions will
result in irreparable damage to the devices. For best
yield, AMD recommends assembly in a Class 10K
clean room with 30% to 60% relative humidity.
Storage
Store at a maximum temperature of 30
°
C in a nitrogen-
purged cabinet or vacuum-sealed bag. Observe all
standard ESD handling procedures.
相關(guān)PDF資料
PDF描述
AM29F200AT-120DPE1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1
Am29F200AT-120DPI 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1
Am29F200AT-90DWC 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1
Am29F200AB-90DGE 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1
Am29F200AB-90DGI 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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