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參數(shù)資料
| 型號(hào)： | AM29F200AT-90EEB |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 256K X 8 FLASH 5V PROM, 90 ns, PDSO48 |
| 封裝： | TSOP-48 |
| 文件頁數(shù)： | 1/39頁 |
| 文件大小： | 237K |
| 代理商： | AM29F200AT-90EEB |
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PRELIMINARY
Publication#
20637
Issue Date:
March 1998
Rev:
B
Amendment/
+3
Am29F200A
2 Megabit (256 K x 8-Bit/128 K x 16-Bit)
CMOS 5.0 Volt-only, Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
I
5.0 V
±
10% for read and write operations
— Minimizes system level power requirements
I
High performance
— Access times as fast as 55 ns
I
Low power consumption
— 20 mA typical active read current (byte mode)
— 28 mA typical active read current for
(word mode)
— 30 mA typical program/erase current
— 1
μ
A typical standby current
I
Sector erase architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
three 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
three 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked via programming
equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
I
Top or bottom boot block configurations
available
I
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
I
Minimum 100,000 write/erase cycles guaranteed
I
Package options
— 44-pin SO
— 48-pin TSOP
I
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash
— Superior inadvertent write protection
I
Data# Polling and Toggle Bit
— Detects program or erase cycle completion
I
Ready/Busy# output (RY/BY#)
— Hardware method for detection of program or
erase cycle completion
I
Erase Suspend/Erase Resume
— Supports reading data from a sector not being
erased
I
Hardware RESET# pin
— Resets internal state machine to the reading
array data
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F200AT-90EI | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| Am29F200AT-90EIB | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| AM29F200AT-90FC | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| Am29F200AT-90FCB | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| AM29F200AT-90FE | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F200BB-120EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F200BB-120SI | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 120ns 44-Pin SOIC |
| AM29F200BB-120SI\T | 制造商:Spansion 功能描述:Flash Mem Parallel 5V 2M-Bit 256K x 8/128K x 16 120ns 44-Pin SOIC T/R |
| AM29F200BB-45SI | 制造商:Advanced Micro Devices 功能描述: |
| AM29F200BB-55EF | 功能描述:閃存 2M (256KX8/128KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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