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參數(shù)資料
| 型號： | AM29F200B-90FC |
| 英文描述： | 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRL3803S with Lead Free Packaging |
| 中文描述： | x8/x16閃存EEPROM |
| 文件頁數(shù)： | 39/39頁 |
| 文件大?。?/td> | 728K |
| 代理商： | AM29F200B-90FC |
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Am29F002B/Am29F002NB
39
REVISION SUMMARY
Revision A (July 1998)
Initial release.
Revision B (January 1999)
Distinctive Characteristics
Added:
I
20-year data retention at 125
°
C
— Reliable operation for the life of the system
AC Characterisitics—Read Operations Table
t
EHQZ
, t
GHQZ
: Changed the 55 speed option to 15 ns
from 20 ns
AC Characteristics—Erase/Program Operations
t
WLAX
: Changed the 90 speed option to 45 ns from 50 ns.
t
DVWH
: Changed the 55 speed option to 25 ns from 30 ns.
t
WLWH
: changed the 55 speed option to 30 ns from 35 ns.
AC Characteristics—Alternate CE# Controlled
Erase/Program Operations
t
DVEH
: Changed the 55 speed option to 25 ns from 30 ns.
t
ELEH
: Changed the 55 speed option to 30 ns from 35 ns.
t
ELAX
: Changed the 90 speed option to 45 ns from 50 ns.
DC Characteristics—TTL/NMOS Compatible
I
CC1
, I
CC2
, I
CC3
,
I
CC4
: Added Note 2 “Maximum I
CC
specifications are tested with V
CC
= V
CCmax
”.
DC Characteristics—CMOS Compatible
I
CC1
, I
CC2
, I
CC3
,
I
CC4
: Added Note 2 “Maximum I
CC
specifications are tested with V
CC
= V
CCmax
”.
Revision C (November 12, 1999)
AC Characteristics—Figure 11. Program
Operations Timing and Figure 12. Chip/Sector
Erase Operations
Deleted t
GHWL
and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision D (November 28, 2000)
Global
Added table of contents.
Ordering Information
Deleted burn-in option.
Table 5, Command Definitions
In Note
4, changed the lower address bit of don’t care
range to A11.
Trademarks
Copyright 2000 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F200B-90FE | x8/x16 Flash EEPROM |
| AM29F200B-90FEB | 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF540N with Standard Packaging |
| AM29F200B-90FI | 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRL1404ZL with Standard Packaging |
| AM29F200B-90SC | 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRL1004L with Lead Free Packaging |
| AM29F200B-90SE | 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF8707PBF with Standard Packaging |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F200BB-120EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F200BB-120SI | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 120ns 44-Pin SOIC |
| AM29F200BB-120SI\T | 制造商:Spansion 功能描述:Flash Mem Parallel 5V 2M-Bit 256K x 8/128K x 16 120ns 44-Pin SOIC T/R |
| AM29F200BB-45SI | 制造商:Advanced Micro Devices 功能描述: |
| AM29F200BB-55EF | 功能描述:閃存 2M (256KX8/128KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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