參數(shù)資料
型號(hào)： Am29F200BB-120DG1
廠商： Advanced Micro Devices, Inc.
英文描述： 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1
中文描述： 2兆位（256畝x 8-Bit/128畝x 16位），5.0伏的CMOS只，扇區(qū)閃存模修訂1
文件頁(yè)數(shù)： 11/11頁(yè)
文件大?。?/td> 444K
代理商： AM29F200BB-120DG1
10
Am29F200B Known Good Die
S U P P L E M E N T
REVISION SUMMARY
Revision A (1997)
Initial release.
Revision B (December 1997)
Formatted for 1998 flash data book.
Revision C (November 1998)
Global
Formatted to match current template. Modified
Am29F200A data sheet for CS39S process technology.
Terms and Conditions
Replaced warranty with new version.
Revision D (December 1998)
Global
Added -75 speed option.
Ordering Information
Changed Gel-Pak quantity to 486. Corrected Surftape
reel size to 7 inches.
Packaging Information
Added section. Moved orientation information from die
photograph section into this section.
Revision D+1 (June 14, 1999)
Physical Specifications
Corrected bond pad dimensions and deleted Si from
the bond pad metalization specification.
Revision D+2 (July 12, 1999)
Global
The device is now available in the high temperature
range (–55
°
C to +140
°
C). T
J
(max) for this range is
+145
°
C.
Revision D+3 (November 17, 1999)
Global
Replaced references to high temperature ratings with a
note to contact AMD for such devices.
Revision D+4 (June 27, 2001)
Manufacturing Information
Added Penang, Malaysia as a test facility (ACN2016).
Trademarks
Copyright 2001 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
相關(guān)PDF資料
PDF描述
Am29F200BB-120DP1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1
Am29F200BB-120DT1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1
AM29F200BB-45 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
Am29F400AT-120EIB 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
Am29F400AT-65EIB 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F200BB-120EC 制造商:Advanced Micro Devices 功能描述:
AM29F200BB-120SI 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 120ns 44-Pin SOIC
AM29F200BB-120SI\T 制造商:Spansion 功能描述:Flash Mem Parallel 5V 2M-Bit 256K x 8/128K x 16 120ns 44-Pin SOIC T/R
AM29F200BB-45SI 制造商:Advanced Micro Devices 功能描述:
AM29F200BB-55EF 功能描述:閃存 2M (256KX8/128KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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