參數(shù)資料
型號: AM29F200BB-70ED
廠商: SPANSION LLC
元件分類: PROM
英文描述: Flash Memory IC; Memory Size:2Mbit; Memory Configuration:256K x 8; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Mounting Type:Surface Mount RoHS Compliant: Yes
中文描述: 128K X 16 FLASH 5V PROM, 70 ns, PDSO48
封裝: LEAD FREE, MO-142DD, TSOP-48
文件頁數(shù): 9/41頁
文件大?。?/td> 818K
代理商: AM29F200BB-70ED
March 3, 2009 21526D5
Am29F200B
15
D A TA
SH EE T
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another
for more information.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend
mode and continue the sector erase operation. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the
device has resumed erasing.
Notes:
1. See the appropriate Command Definitions table for erase
command sequence.
2. See “DQ3: Sector Erase Timer” for more information.
Figure 3.
Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh?
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
相關(guān)PDF資料
PDF描述
AM29F200BB-70EF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes
AM29F200BB-70SD Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes
AM29F200BB-70SF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes
AM29F200BB-90EC Flash Memory IC; Access Time, Tacc:90ns; Package/Case:48-TSOP; Leaded Process Compatible:No; Memory Configuration:256K x 8; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5.5V; Mounting Type:Surface Mount RoHS Compliant: No
AM29F200BB-90ED Flash Memory IC; Memory Size:2Mbit; Memory Configuration:256K x 8; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Mounting Type:Surface Mount RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F200BB70EE 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 70ns 48-Pin TSOP
AM29F200BB-70EE 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 70ns 48-Pin TSOP
AM29F200BB-70EE\T 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 70ns 48-Pin TSOP T/R
AM29F200BB-70EF 功能描述:閃存 2M (256KX8/128KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
AM29F200BB-70EF\\T 制造商:Spansion 功能描述:IC 2M FLSH(256KX16)BTOM SCTR F