- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄362257 > AM29F200BT-45EC 100V Single N-Channel Automotive HEXFET Power MOSFET in a D-Pak package; Similar to IRFR3710Z with Lead Free Packaging PDF資料下載
參數(shù)資料
| 型號(hào)： | AM29F200BT-45EC |
| 英文描述： | 100V Single N-Channel Automotive HEXFET Power MOSFET in a D-Pak package; Similar to IRFR3710Z with Lead Free Packaging |
| 中文描述： | x8/x16閃存EEPROM |
| 文件頁(yè)數(shù)： | 34/39頁(yè) |
| 文件大?。?/td> | 728K |
| 代理商： | AM29F200BT-45EC |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)當(dāng)前第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)
34
Am29F002B/Am29F002NB
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1.
Typical program and erase times assume the following conditions: 25×C, 5.0 V V
CC
, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, V
CC
= 4.5 V (4.75 V for ±5% devices), 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle sequence for the program command. See Table 5
for further information on command definitions.
6. The device has a minimum guaranteed erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 5.0 V, one pin at a time. RESET# not available on Am29F002NB.
TSOP PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
1
8
s
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
7
s
Byte Programming Time
7
300
μs
Excludes system level
overhead (Note 5)
Chip Programming Time (Note 3)
1.8
5.4
s
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
7.5
9
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F200BT-45EI | 100V Single N-Channel HEXFET Power MOSFET in a D2Pak package; Similar to IRF8010S with Lead-Free packaging. |
| AM29F200BT-45FC | 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF540NL with Standard Packaging |
| AM29F200BT-45FI | 55V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR4105Z with Lead Free Packaging |
| AM29F200BT-55FE | x8/x16 Flash EEPROM |
| AM29F200BT-55FI | 20V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRLU3714 with Lead Free Packaging |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F200BT-50EE | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 50ns 48-Pin TSOP |
| AM29F200BT-50SI | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 50ns 44-Pin SOIC |
| AM29F200BT-55EC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 128K x 16, 48 Pin, Plastic, TSSOP |
| AM29F200BT-55EE | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 55ns 48-Pin TSOP |
| AM29F200BT-55EF | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 55ns 48-Pin TSOP |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。