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參數(shù)資料
| 型號： | AM29F200BT-70EF |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes |
| 中文描述： | 128K X 16 FLASH 5V PROM, 70 ns, PDSO48 |
| 封裝： | LEAD FREE, MO-142DD, TSOP-48 |
| 文件頁數(shù)： | 23/41頁 |
| 文件大?。?/td> | 818K |
| 代理商： | AM29F200BT-70EF |
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DATA SHEET
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 21526
Rev: D Amendment: 5
Issue Date: March 3, 2009
Am29F200B
2 Megabit (256 K x 8-Bit/128 K x 16-Bit)
CMOS 5.0 Volt-only, Boot Sector Flash Memory
This product has been retired and is not recommended for designs. Please contact your Spansion representative
for alternates. Availability of this document is retained for reference and historical purposes only.
DISTINCTIVE CHARACTERISTICS
■ 5.0 V for read and write operations
— Minimizes system level power requirements
■ Manufactured on 0.32 m process technology
— Compatible with 0.5 m Am29F200A device
■ High performance
— Access times as fast as 45 ns
■ Low power consumption
— 20 mA typical active read current (byte mode)
— 28 mA typical active read current for
(word mode)
— 30 mA typical program/erase current
— 1 A typical standby current
■ Sector erase architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
three 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
three 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked via programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■ Top or bottom boot block configurations available
■ Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■ Minimum 1,000,000 write/erase cycles guaranteed
■ 20-year data retention at 125°C
— Reliable operation for the life of the system
■ Package options
— 44-pin SO
— 48-pin TSOP
— Known Good Die (KGD)
(see publication number 21257)
■ Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash
— Superior inadvertent write protection
■ Data# Polling and Toggle Bit
— Detects program or erase cycle completion
■ Ready/Busy# output (RY/BY#)
— Hardware method for detection of program or
erase cycle completion
■ Erase Suspend/Erase Resume
— Supports reading data from a sector not
being erased
■ Hardware RESET# pin
— Resets internal state machine to the reading
array data
相關PDF資料 |
PDF描述 |
|---|---|
| AM29F200BT-70SD | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes |
| AM29F200BT-70SF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes |
| AM29F200BT-90ED | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes |
| AM29F200BT-90EF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes |
| AM29F200BB-90DTI1 | 128K X 16 FLASH 5V PROM, 90 ns, UUC42 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F200BT-70EF\T | 功能描述:閃存 IC 2M FLSH,256K X 16 TOP SCTR RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AM29F200BT-70SC | 制造商: 功能描述: 制造商:undefined 功能描述: |
| AM29F200BT-70SF | 功能描述:閃存 2M (256KX8/128KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AM29F200BT-90SC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F200BT-90SI | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 90ns 44-Pin SO |
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