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參數(shù)資料
| 型號(hào)： | AM29F200T-150SE |
| 英文描述： | 55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; Similar to IRFIZ46N with Lead Free Packaging |
| 中文描述： | x8/x16閃存EEPROM |
| 文件頁(yè)數(shù)： | 24/39頁(yè) |
| 文件大?。?/td> | 728K |
| 代理商： | AM29F200T-150SE |
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24
Am29F002B/Am29F002NB
TEST CONDITIONS
Table 7.
Test Specifications
KEY TO SWITCHING WAVEFORMS
2.7 k
C
L
6.2 k
5.0 V
Device
Under
Test
Figure 8.
Test Setup
Note:
Diodes are IN3064 or equivalent
Test Condition
-55
All
others
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
100
pF
Input Rise and Fall Times
5
20
ns
Input Pulse Levels
0.0–3.0
0.45–2.4
V
Input timing measurement
reference levels
1.5
0.8, 2.0
V
Output timing measurement
reference levels
1.5
0.8, 2.0
V
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F200T-150SEB | 55V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR024N with Lead Free Packaging |
| AM29F200T-90SI | 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF3515S with Standard Packaging |
| AM29F400A | Am29F400A - 4 Megabit (524.288 x 8-Bit/262.144 x 16-Bit) CMOS 5.0 Volt-only. Sector Erase Flash Memory |
| AM29F400AB-120EE | 100V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRLU120N with Standard Packaging |
| AM29F400AB-120EEB | x8/x16 Flash EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F400AB-120DGC1 | 制造商:Spansion 功能描述:4M FLASH KNOWN GOOD DIE W/ TOP BOOT (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F400AB120EC | 制造商:AMD 功能描述:* |
| AM29F400AB-120SC | 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 5V 4M-Bit 512K x 8/256K x 16 120ns 44-Pin SO |
| AM29F400AB-70EI | 制造商:Advanced Micro Devices 功能描述: |
| AM29F400AB-75EC | 制造商:Advanced Micro Devices 功能描述: |
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