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參數(shù)資料
| 型號(hào)： | AM29F200T-150SEB |
| 英文描述： | 55V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR024N with Lead Free Packaging |
| 中文描述： | x8/x16閃存EEPROM |
| 文件頁(yè)數(shù)： | 4/39頁(yè) |
| 文件大?。?/td> | 728K |
| 代理商： | AM29F200T-150SEB |
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4
Am29F002B/Am29F002NB
PRODUCT SELECTOR GUIDE
Note:
See “AC Characteristics” for full specifications.
BLOCK DIAGRAM
Family Part Number
Am29F002B/Am29F002NB
Speed Option
V
CC
= 5.0 V ± 5%
-55
V
CC
= 5.0 V ± 10%
-70
-90
-120
Max access time, ns (t
ACC
)
55
70
90
120
Max CE# access time, ns (t
CE
)
55
70
90
120
Max OE# access time, ns (t
OE
)
30
30
35
50
Input/Output
Buffers
X-Decoder
Y-Decoder
Chip Enable
Output Enable
Logic
Erase Voltage
Generator
PGM Voltage
Generator
Timer
V
CC
Detector
State
Control
Command
Register
V
CC
V
SS
WE#
CE#
OE#
STB
STB
DQ0
–
DQ7
Sector Switches
RESET#
Data
Latch
Y-Gating
Cell Matrix
A
A0–A17
n/a Am29F002NB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F200T-90SI | 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF3515S with Standard Packaging |
| AM29F400A | Am29F400A - 4 Megabit (524.288 x 8-Bit/262.144 x 16-Bit) CMOS 5.0 Volt-only. Sector Erase Flash Memory |
| AM29F400AB-120EE | 100V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRLU120N with Standard Packaging |
| AM29F400AB-120EEB | x8/x16 Flash EEPROM |
| AM29F400AB-120FE | 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF8113 with Lead Free Packaging |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F400AB-120DGC1 | 制造商:Spansion 功能描述:4M FLASH KNOWN GOOD DIE W/ TOP BOOT (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F400AB120EC | 制造商:AMD 功能描述:* |
| AM29F400AB-120SC | 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 5V 4M-Bit 512K x 8/256K x 16 120ns 44-Pin SO |
| AM29F400AB-70EI | 制造商:Advanced Micro Devices 功能描述: |
| AM29F400AB-75EC | 制造商:Advanced Micro Devices 功能描述: |
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