- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄362249 > AM29F200T-90SE x8/x16 Flash EEPROM PDF資料下載
參數(shù)資料
| 型號： | AM29F200T-90SE |
| 英文描述： | x8/x16 Flash EEPROM |
| 中文描述： | x8/x16閃存EEPROM |
| 文件頁數(shù)： | 16/39頁 |
| 文件大小： | 728K |
| 代理商： | AM29F200T-90SE |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁當(dāng)前第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁
16
Am29F002B/Am29F002NB
Command Definitions
Table 5.
Am29F002B/Am29F002NB Command Definitions
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed.
Addresses latch on the falling edge of the WE# or CE# pulse,
whichever happens later.
PD = Data to be programmed at location PA. Data latches on the
rising edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A17–A13 uniquely select any sector.
Notes:
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
3. Except when reading array or autoselect data, all bus cycles
are write operations.
4. Address bits A17–A11 are don’t cares for unlock and
command cycles, except when PA or SA is required.
5. No unlock or command cycles required when reading array
data.
6. The Reset command is required to return to reading array
data when device is in the autoselect mode, or if DQ5 goes
high (while the device is providing status data).
7. The fourth cycle of the autoselect command sequence is a
read cycle.
8. The data is 00h for an unprotected sector and 01h for a
protected sector. See “Autoselect Command Sequence” for
more information.
9. The system may read and program n non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend
mode. The Erase Suspend command is valid only during a
sector erase operation.
10. The Erase Resume command is valid only during the Erase
Suspend mode.
Command
Sequence
(Note 1)
Bus Cycles (Notes 2–4)
Third
Addr
Data Addr
First
Second
Addr
Fourth
Fifth
Sixth
Addr
RA
XXX
555
Data
RD
F0
AA
Data
Data
Addr Data
Addr
Data
Read (Note 5)
Reset (Note 6)
1
1
4
Auto-
select
(Note 7)
Manufacturer ID
Device ID,
Top Boot Block
Device ID,
Bottom Boot Block
2AA
55
555
90
X00
01
4
555
AA
2AA
55
555
90
X01
B0
4
555
AA
2AA
55
555
90
X01
34
Sector Protect Verify
(Note 8)
4
555
AA
2AA
55
555
90
(SA)
X02
00
01
PD
AA
AA
Program
Chip Erase
Sector Erase
Erase Suspend (Note 9)
Erase Resume (Note 10)
4
6
6
1
1
555
555
555
XXX
XXX
AA
AA
AA
B0
30
2AA
2AA
2AA
55
55
55
555
555
555
A0
80
80
PA
555
555
2AA
2AA
55
55
555
SA
10
30
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F200T-90SEB | 55V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRLR024Z with Standard Packaging |
| AM29F400AT-150SEB | 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF1010ZL with Lead Free Packaging |
| AM29F400AT-65EE | 100V Single N-Channel Automotive HEXFET Power MOSFET in a I-Pak package; Similar to IRFU3710Z with Lead Free Packaging |
| AM29F400AT-65EEB | 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRL1104S with Lead Free Packaging |
| AM29F400AT-65FE | 30V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRL3713L with Lead Free Packaging |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F400AB-120DGC1 | 制造商:Spansion 功能描述:4M FLASH KNOWN GOOD DIE W/ TOP BOOT (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F400AB120EC | 制造商:AMD 功能描述:* |
| AM29F400AB-120SC | 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 5V 4M-Bit 512K x 8/256K x 16 120ns 44-Pin SO |
| AM29F400AB-70EI | 制造商:Advanced Micro Devices 功能描述: |
| AM29F400AB-75EC | 制造商:Advanced Micro Devices 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。