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參數(shù)資料
| 型號： | Am29F400AT-120EIB |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| 中文描述： | 4兆位（524,288 x 8-Bit/262，144 x 16位），5.0伏的CMOS只，扇區(qū)擦除閃存 |
| 文件頁數(shù)： | 14/35頁 |
| 文件大?。?/td> | 136K |
| 代理商： | AM29F400AT-120EIB |
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14
Am29F400AT/Am29F400AB
P R E L I M I N A R Y
accepted and erasure will start. It is recommended that
processor interrupts be disabled during this time to
guarantee this condition. The interrupts can be
re-enabled after the last Sector Erase command
is written. A time-out of 100
μ
s from the rising edge of
the last WE will initiate the execution of the Sector
Erase command(s). If another falling edge of the WE
occurs within the 100
μ
s time-out window the timer is
reset. (Monitor DQ3 to determine if the sector erase
timer window is still open, see section DQ3, Sector
Erase Timer.) Any command other than Sector Erase
or Erase Suspend during this period will reset the de-
vice to the read mode, ignoring the previous command
string. In that case, restart the erase on those sectors
and allow them to complete.
(Refer to the Write Operation Status section for DQ3,
Sector Erase Timer operation.) Loading the sector
erase buffer may be done in any sequence and with
any number of sectors (0 to10).
Sector erase does notrequire the user to program the
device prior to erase. The device automatically pro-
grams all memory locations in the sector(s) to be
erased prior to electrical erase. When erasing a sector
or sectors the remaining unselected sectors are not af-
fected. The system is notrequired to provide any con-
trols or timings during these operations.
The automatic sector erase begins after the 100
μ
s
time out from the rising edge of the WE pulse for the
last sector erase command pulse and terminates when
the data on DQ7, Data Polling, is “1” (see Write Opera-
tion Status section) at which time the device returns to
the read mode. Data Polling must be performed at an
address within any of the sectors being erased.
Figure 1 illustrates the Embedded Erase Algorithm
using typical command strings and bus operations.
Erase Suspend
The Erase Suspend command allows the user to inter-
rupt a Sector Erase operation and then perform data
reads from a sector not being erased. This command is
applicable ONLY during the Sector Erase operation
which includes the time-out period for sector erase. The
Erase Suspend command will be ignored if written dur-
ing the Chip Erase operation or Embedded
Program Algorithm. Writing the Erase Suspend com-
mand during the Sector Erase time-out results in imme-
diate termination of the time-out period and suspension
of the erase operation.
Any other command written during the Erase Suspend
mode will be ignored except the Erase
Resume command. Writing the Erase Resume com-
mand resumes the erase operation. The addresses are
“don’t-cares” when writing the Erase Suspend or Erase
Resume command.
When the Erase Suspend command is written during
the Sector Erase operation, the device will take a max-
imum of 15
μ
s to suspend the erase operation. When
the device has entered the erase-suspended mode,
DQ6 will stop toggling. The user must use the address
of a sector being erased for reading DQ6 to determine
if the erase operation has been suspended. Further
writes of the Erase Suspend command are ignored.
When the erase operation has been suspended, the
device defaults to the erase-suspend-read mode.
Reading data in this mode is the same as reading from
the standard read mode except that the data must be
read from sectors that have not been
erase-suspended.
To resume the operation of Sector Erase, the Resume
command (30H) should be written. Any further writes of
the Resume command at this point will be ignored. An-
other Erase Suspend command can be written after the
chip has resumed erasing.
Write Operation Status
Table 8.
Write Operation Status
Notes:
1. D8–D15 = Don’t Care for x16 mode.
2. DQ4 for AMD internal use only.
Status
DQ7
DQ6
DQ5
DQ3
In Progress
Auto-Programming
DQ7
Toggle
0
0
Program/Erase in Auto-Erase
0
Toggle
0
1
Exceeded
Time Limits
Auto-Programming
DQ7
Toggle
1
0
Program/Erase in Auto-Erase
0
Toggle
1
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Am29F400AT-65EIB | 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F400AT-70EC | 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F400AB-65FI | 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F400AT | 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| Am29F400AT-65FCB | 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F400AT-120SC | 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 5V 4M-Bit 512K x 8/256K x 16 120ns 44-Pin SO |
| AM29F400AT-90SC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 256K x 16, 44 Pin, Plastic, SOP |
| AM29F400BB | 制造商: 功能描述: 制造商:undefined 功能描述: |
| AM29F400BB120EC | 制造商:AMD 功能描述:New |
| AM29F400BB-120SC | 制造商:Advanced Micro Devices 功能描述: |
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