參數資料
型號: AM29F400AT
廠商: Advanced Micro Devices, Inc.
英文描述: 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
中文描述: 4兆位(524,288 x 8-Bit/262,144 x 16位),5.0伏的CMOS只,扇區(qū)擦除閃存
文件頁數: 33/35頁
文件大?。?/td> 136K
代理商: AM29F400AT
Am29F400AT/Am29F400AB
33
P R E L I M I N A R Y
5
SWITCHING WAVEFORMS
Notes:
1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at byte address.
3. DQ7 is the output of the complement of the data written to the device.
4. D
OUT
is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
6. These waveforms are for the x16 mode.
Figure 19.
Alternate CE Controlled Program Operation Timings
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. 25
°
C, 5.0 V V
CC
, 100,000 cycles.
2. Although Embedded Algorithms allow for longer chip program and erase time, the actual time will be considerably less since
bytes program or erase significantly faster than the worst case byte.
3. Under worst case condition of 90
°
C, 4.5 V V
CC
, 100,000 cycles.
4. System-level overhead is defined as the time required to execute the four bus cycle command necessary to program each
byte. In the preprogramming step of the Embedded Erase algorithm, all bytes are programmed to 00H before erasure.
5. The Embedded Algorithms allow for 2.5 ms byte program time. DQ5 = “1” only after a byte takes the theoretical maximum time
to program. A minimal number of bytes may require significantly more programming pulses than the typical byte. The majority
of the bytes will program within one or two pulses. This is demonstrated by the Typical and Maximum Programming Times
listed above.
Parameter
Limits
Unit
Comments
Typ (Note 1)
Max
Sector Erase Time
1.0
8
sec
Excludes 00H programming prior to erasure
Chip Erase Time
11
88
sec
Excludes 00H programming prior to erasure
Byte Programming Time
7
300 (Note 3)
μ
s
Excludes system-level overhead (Note 4)
Word Programming Time
14
600
μ
s
Excludes system-level overhead (Note 4)
Chip Programming Time
3.6
10.8 (Notes 3, 5)
sec
Excludes system-level overhead (Note 4)
D
OUT
PD
t
AH
Data Polling
t
DS
t
WS
t
CPH
t
DH
t
CP
t
GHEL
Addresses
WE
OE
CE
Data
5.0 Volt
DQ7
5555H
PA
A0H
PA
20380B-26
t
WC
t
AS
t
WHWH1
相關PDF資料
PDF描述
Am29F400AT-65FCB 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
Am29F400AT-65FIB 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F400BB-90DGE1 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1
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