- 您現(xiàn)在的位置：買賣IC網 > PDF目錄362249 > AM29F400B-120SE x8/x16 Flash EEPROM PDF資料下載
參數資料
| 型號： | AM29F400B-120SE |
| 英文描述： | x8/x16 Flash EEPROM |
| 中文描述： | x8/x16閃存EEPROM |
| 文件頁數： | 34/39頁 |
| 文件大?。?/td> | 728K |
| 代理商： | AM29F400B-120SE |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁當前第34頁第35頁第36頁第37頁第38頁第39頁
34
Am29F002B/Am29F002NB
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1.
Typical program and erase times assume the following conditions: 25×C, 5.0 V V
CC
, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, V
CC
= 4.5 V (4.75 V for ±5% devices), 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle sequence for the program command. See Table 5
for further information on command definitions.
6. The device has a minimum guaranteed erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 5.0 V, one pin at a time. RESET# not available on Am29F002NB.
TSOP PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
1
8
s
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
7
s
Byte Programming Time
7
300
μs
Excludes system level
overhead (Note 5)
Chip Programming Time (Note 3)
1.8
5.4
s
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
7.5
9
pF
相關PDF資料 |
PDF描述 |
|---|---|
| AM29F400B-120SEB | 100V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRFR3412 with Standard Packaging |
| AM29F400B-120SI | 100V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR3412 with Lead Free Packaging |
| AM29F400B-90EC | 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFB4410ZPBF with Standard Packaging |
| AM29F400B-90EE | 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRLR7821 with Lead Free Packaging |
| AM29F400B-90EEB | x8/x16 Flash EEPROM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AM29F400BB | 制造商: 功能描述: 制造商:undefined 功能描述: |
| AM29F400BB120EC | 制造商:AMD 功能描述:New |
| AM29F400BB-120SC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F400BB120SI | 制造商:AMD 功能描述:* |
| AM29F400BB45EF | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K/256K x 8bit/16bit 45ns 48-Pin TSOP |
發(fā)布緊急采購，3分鐘左右您將得到回復。