參數(shù)資料
型號(hào): AM29F400BB-70SE
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
中文描述: 256K X 16 FLASH 5V PROM, 70 ns, PDSO44
封裝: MO-180AA, SOP-44
文件頁(yè)數(shù): 27/41頁(yè)
文件大?。?/td> 919K
代理商: AM29F400BB-70SE
Am29F400B
33
AC CHARACTERISTICS
Temporary Sector Unprotect
Note: Not 100% tested.
Parameter
All Speed Options
JEDEC
Std
Description
Unit
tVIDR
VID Rise and Fall Time (See Note)
Min
500
ns
tRSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
s
Note:
The system may use either CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an
erase-suspended sector.
Figure 17.
DQ2 vs. DQ6
Enter
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
Program
Resume
Embedded
Erasing
RESET#
tVIDR
12 V
0 or 5 V
CE#
WE#
RY/BY#
tVIDR
tRSP
Program or Erase Command Sequence
0 or 5 V
Figure 18.
Temporary Sector Unprotect Timing Diagram
相關(guān)PDF資料
PDF描述
AM29F400BB-70EEB 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
AM29LL800T-200EBB 1M X 8 FLASH 3V PROM, 200 ns, PDSO48
AM29LV004B-90FE 512K X 8 FLASH 3V PROM, 90 ns, PDSO40
AM29LV004B-90ED 512K X 8 FLASH 3V PROM, 90 ns, PDSO40
Am29LV400B-90RWACB 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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