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參數(shù)資料
| 型號： | AM29F400BB-90ED |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | Flash Memory IC; Memory Size:4Mbit; Memory Configuration:256K x 16 / 512K x 8; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns RoHS Compliant: Yes |
| 中文描述： | 256K X 16 FLASH 5V PROM, 90 ns, PDSO48 |
| 封裝： | LEAD FREE, MO-142DD, TSOP-48 |
| 文件頁數(shù)： | 3/43頁 |
| 文件大小： | 865K |
| 代理商： | AM29F400BB-90ED |
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March 3, 2009 21505E6
Am29F400B
9
D A TA
SH EE T
After the system writes the autoselect command
sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the
internal register (which is separate from the memory
array) on DQ7–DQ0. Standard read cycle timings apply
in this mode. Refer to the “Autoselect Mode” and
“Autoselect Command Sequence” sections for more
information.
ICC2 in the DC Characteristics table represents the
active current specification for the write mode. The “AC
Characteristics” section contains timing specification
tables and timing diagrams for write operations.
Program and Erase Operation Status
During an erase or program operation, the system may
check the status of the operation by reading the status
bits on DQ7–DQ0. Standard read cycle timings and ICC
read specifications apply. Refer to “The Erase Resume
mode.” for more information, and to “AC Characteris-
tics” for timing diagrams.
Standby Mode
When the system is not reading or writing to the device,
it can place the device in the standby mode. In this
mode, current consumption is greatly reduced, and the
outputs are placed in the high impedance state, inde-
pendent of the OE# input.
The device enters the CMOS standby mode when the
CE# and RESET# pins are both held at VCC ± 0.5 V.
(Note that this is a more restricted voltage range than
VIH.) The device enters the TTL standby mode when
CE# and RESET# pins are both held at VIH. The device
requires standard access time (tCE) for read access
when the device is in either of these standby modes,
before it is ready to read data.
The device also enters the standby mode when the
RESET# pin is driven low. Refer to the next section,
If the device is deselected during erasure or program-
ming, the device draws active current until the
operation is completed.
In the CMOS and TTL/NMOS-compatible DC Charac-
teristics tables, ICC3 represents the standby current
specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of reset-
ting the device to reading array data. When the
RESET# pin is driven low for at least a period of tRP, the
device immediately terminates any operation in
progress, tristates all output pins, and ignores all read/
write commands for the duration of the RESET# pulse.
The device also resets the internal state machine to
reading array data. The operation that was interrupted
should be reinitiated once the device is ready to accept
another command sequence, to ensure data integrity.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at VIL, the device enters
the TTL standby mode; if RESET# is held at VSS±0.5
V, the device enters the CMOS standby mode.
The RESET# pin may be tied to the system reset cir-
cuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firm-
ware from the Flash memory.
If RESET# is asserted during a program or erase oper-
ation, the RY/BY# pin remains a “0” (busy) until the
internal reset operation is complete, which requires a
time of tREADY (during Embedded Algorithms). The
system can thus monitor RY/BY# to determine whether
the reset operation is complete. If RESET# is asserted
when a program or erase operation is not executing
(RY/BY# pin is “1”), the reset operation is completed
within a time of tREADY (not during Embedded Algo-
rithms). The system can read data tRH after the
RESET# pin returns to VIH.
Refer to the AC Characteristics tables for RESET#
parameters and to Figure 10 for the timing diagram.
Output Disable Mode
When the OE# input is at VIH, output from the device is
disabled. The output pins are placed in the high imped-
ance state.
相關PDF資料 |
PDF描述 |
|---|---|
| AM29F400BT-120EF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes |
| AM29F400BT-55ED | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes |
| AM29F400BT-70EC | Flash Memory IC; Access Time, Tacc:70ns; Package/Case:48-TSOP; Leaded Process Compatible:No; Memory Configuration:256K x 16 / 512K x 8; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5.5V; Mounting Type:Surface Mount RoHS Compliant: No |
| AM29F400BT-70ED | Flash Memory IC; Memory Configuration:256K x 16 / 512K x 8; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5.5V; Access Time, Tacc:70ns; Mounting Type:Surface Mount RoHS Compliant: Yes |
| AM29F400BT-70SD | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F400BB-90EF | 功能描述:閃存 4M (512KX8/256Kx16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AM29F400-BB90EI | 制造商:Advanced Micro Devices 功能描述: |
| AM29F400BB-90EI | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K/256K x 8bit/16bit 90ns 48-Pin TSOP 制造商:Spansion 功能描述:4M CMOS FLASH 5V 制造商:Advanced Micro Devices 功能描述:NOR Flash, 256K x 16, 48 Pin, Plastic, TSSOP |
| AM29F400BB-90EK | 制造商:Spansion 功能描述: |
| AM29F400BB-90SD | 制造商:Spansion 功能描述:Flash Memory IC |
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