參數(shù)資料
型號(hào)： AM29F400BT-50EC
英文描述： 150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRL3215 with Standard Packaging
中文描述： x8/x16閃存EEPROM
文件頁(yè)數(shù)： 34/39頁(yè)
文件大?。?/td> 728K
代理商： AM29F400BT-50EC
34
Am29F002B/Am29F002NB
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1.
Typical program and erase times assume the following conditions: 25×C, 5.0 V V
CC
, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, V
CC
= 4.5 V (4.75 V for ±5% devices), 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle sequence for the program command. See Table 5
for further information on command definitions.
6. The device has a minimum guaranteed erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 5.0 V, one pin at a time. RESET# not available on Am29F002NB.
TSOP PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
1
8
s
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
7
s
Byte Programming Time
7
300
μs
Excludes system level
overhead (Note 5)
Chip Programming Time (Note 3)
1.8
5.4
s
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
7.5
9
pF
相關(guān)PDF資料
PDF描述
AM29F400BT-50EE 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRFZ46ZS with Standard Packaging
AM29F400BT-50EI 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRL520N with Standard Packaging
AM29F400BT-50FC x8/x16 Flash EEPROM
AM29F400BT-50FE 200V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7492 with Standard Packaging
AM29F400BT-50FI x8/x16 Flash EEPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F400BT-50EI 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K/256K x 8bit/16bit 50ns 48-Pin TSOP
AM29F400BT-55EC 制造商:Advanced Micro Devices 功能描述:
AM29F400BT-55EF 功能描述:閃存 4M (512KX8/256Kx16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
AM29F400BT-55EF/T 制造商:Spansion 功能描述:4M (512KX8/256KX16) 5V, BOOT BLOCK, TOP, TSOP48, IND, HAZMAT - Tape and Reel
AM29F400BT-55EIT 制造商:Spansion 功能描述:4 MEGABIT 512 K X 8-BIT/256 K X 16-BIT CMOS 5.0 VOLT-ONLY BOOT SECTOR FLASH MEMORY
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