參數(shù)資料
型號(hào): AM29F400BT-70SF
廠商: SPANSION LLC
元件分類: PROM
英文描述: Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes
中文描述: 256K X 16 FLASH 5V PROM, 70 ns, PDSO44
封裝: LEAD FREE, MO-180AAA, SOP-44
文件頁(yè)數(shù): 23/43頁(yè)
文件大?。?/td> 856K
代理商: AM29F400BT-70SF
DATA SHEET
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 21505
Rev: E Amendment: 8
Issue Date: November 11, 2009
Am29F400B
4 Megabit (512 K x 8-Bit/256 K x 16-Bit)
CMOS 5.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
— 5.0 volt-only operation for read, erase, and
program operations
— Minimizes system level requirements
■ Manufactured on 0.32 m process technology
— Compatible with 0.5 m Am29F400 device
■ High performance
— Access times as fast as 45 ns
■ Low power consumption (typical values at
5 MHz)
— 1 A standby mode current
— 20 mA read current (byte mode)
— 28 mA read current (word mode)
— 30 mA program/erase current
■ Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
seven 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
seven 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked via programming
equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■ Top or bottom boot block configurations available
■ Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■ Minimum 1,000,000 program/erase cycles per
sector guaranteed
■ 20-year data retention at 125° C
— Reliable operation for the life of the system
■ Package option
— 48-pin TSOP
— 44-pin SO
— Known Good Die (KGD)
(see publication number 21258)
■ Compatibility with JEDEC standards
— Pinout and software compatible with single-
power-supply Flash
— Superior inadvertent write protection
■ Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
■ Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
■ Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
■ Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F400BT-70SF\T 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K/256K x 8bit/16bit 70ns 44-Pin SO
AM29F400BT-90EC 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 5V 4M-Bit 512K x 8/256K x 16 90ns 48-Pin TSOP
AM29F400BT-90ED 制造商:Spansion 功能描述:FLASH TOP BLOCK 4MB SMD 29F400
AM29F400BT-90EF 功能描述:閃存 4M (512KX8/256Kx16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
AM29F400BT-90EI\T 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 5V 4M-Bit 512K x 8/256K x 16 90ns 48-Pin TSOP T/R