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參數(shù)資料
| 型號(hào)： | AM29F400BT-90SF0 |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 4兆位（512畝x 8-Bit/256畝x 16位），5.0伏的CMOS只引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 14/43頁 |
| 文件大?。?/td> | 548K |
| 代理商： | AM29F400BT-90SF0 |
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Am29F400B
21505E5 November1,2006
D A T A S H E E T
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to Table 5 for
command definitions). In addition, the following hard-
ware data protection measures prevent accidental
erasure or programming, which might otherwise be
caused by spurious system level signals during V
CC
power-up and power-down transitions, or from system
noise.
Low V
CC
Write Inhibit
When V
CC
is less than V
LKO
, the device does not
accept any write cycles. This protects data during V
CC
power-up and power-down. The command register and
all internal program/erase circuits are disabled, and the
device resets. Subsequent writes are ignored until V
CC
is greater than V
LKO
. The system must provide the
proper signals to the control pins to prevent uninten-
tional writes when V
CC
is greater than V
LKO
.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or
WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
V
IL
, CE# = V
IH
or WE# = V
IH
. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.
Power-Up Write Inhibit
If WE# = CE# = V
IL
and OE# = V
IH
during power up, the
device does not accept commands on the rising edge
of WE#. The internal state machine is automatically
reset to reading array data on power-up.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F400BT-90SI | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| AM29F400BT-90SI0 | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| AM29F400BT-90SK | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| AM29F400BT-90SK0 | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| AM29F800B-120FE | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F400BT-90SI | 制造商:Spansion 功能描述: |
| AM29F800BB-120DPC1 | 制造商:Spansion 功能描述:5V 8M FLASH KNOWN GOOD DIE W/BOTTOM BOOT (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F800BB120SC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F800BB-55EC | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M/512K x 8bit/16bit 55ns 48-Pin TSOP |
| AM29F800BB-55EF | 功能描述:閃存 8M (1MX8/512KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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