參數(shù)資料
型號(hào)： AM29F800B-120EE
廠商： ADVANCED MICRO DEVICES INC
元件分類： PROM
英文描述： 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
中文描述： 512K X 16 FLASH 5V PROM, 120 ns, PDSO48
封裝： TSOP-48
文件頁數(shù)： 13/41頁
文件大?。?/td> 267K
代理商： AM29F800B-120EE
8/18/97
Am29F800T/Am29F800B
13
P R E L I M I N A R Y
Table 7.
Am29F800 Command Definitions
Legend:
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of the WE or CE pulse.
PD = Data to be programmed at location PA. Data is latched on the rising edge of WE or CE pulse.
SA = Address of the sector to be erased. Address bits A18–A12 uniquely select any sector.
Notes:
1. All values are in hexadecimal.
2. See Tables 1 and 2 for description of bus operations.
3. The data is 00H for an unprotected sector group and 01H for a protected sector group. The complete bus address is
composed of the sector address (A18–A12), A1 = 1, and A0 = 0.
4. Read and program functions in non-erasing sectors are allowed in the Erase Suspend mode.
5. Address bits A18–A11 are don’t care for unlock and command cycles.
Command
Sequence
Read/Reset
(Note 2)
Bus
Write
Cycles
Req’d
First Bus
Write Cycle
Second Bus
Read/Write
Cycle
Third Bus Write
Cycle
Fourth Bus
Read/Write
Cycle
Fifth Bus
Write Cycle
Sixth Bus
Write Cycle
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Reset/Read
Word
1
XXX
XXF0
RA
RD
Byte
F0
Autoselect
Manufacturer ID
Word
3
555
XXAA
2AA
XX55
555
XX90
XX00
XX01
Byte
AAA
AA
555
55
AAA
90
00
01
Autoselect
Device ID
(Top Boot Block)
Word
3
555
XXAA
2AA
XX55
555
XX90
XX01
22D6
Byte
AAA
AA
555
55
AAA
90
02
D6
Autoselect
Device ID
(Bottom Boot
Block)
Word
3
555
XXAA
2AA
XX55
555
XX90
XX01
2258
Byte
AAA
AA
555
55
AAA
90
02
58
Autoselect
Sector Protect
Verify (Note 3)
Word
3
555
XXAA
2AA
XX55
555
XX90
(SA)
X02
XX00
XX01
Byte
AAA
AA
555
55
AAA
90
(SA)
X04
00
01
Byte Program
Word
4
555
XXAA
2AA
XX55
555
XXA0
PA
PD
Byte
AAA
AA
555
55
AAA
A0
Chip Erase
Word
6
555
XXAA
2AA
XX55
555
XX80
555
XXAA
2AA
XX55
555
XX10
Byte
AAA
AA
555
55
AAA
80
AAA
AA
555
55
AAA
10
Sector Erase
Word
6
555
XXAA
2AA
XX55
555
XX80
555
XXAA
2AA
XX55
SA
XX30
Byte
AAA
AA
555
55
AAA
80
AAA
AA
555
55
30
Erase Suspend
(Note 4)
Word
1
XXX
XXB0
Byte
B0
Erase Resume
Word
1
XXX
XX30
Byte
30
相關(guān)PDF資料
PDF描述
AM29F800B-120EEB 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800B-120EI 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800B-120EIB 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800B-120FC 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800B-120FCB 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F800BB-120DPC1 制造商:Spansion 功能描述:5V 8M FLASH KNOWN GOOD DIE W/BOTTOM BOOT (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film
AM29F800BB120SC 制造商:Advanced Micro Devices 功能描述:
AM29F800BB-55EC 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M/512K x 8bit/16bit 55ns 48-Pin TSOP
AM29F800BB-55EF 功能描述:閃存 8M (1MX8/512KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
AM29F800BB-55EF\\T 制造商:Spansion 功能描述:IC 8MEG(512K16)BOTTOM SCTOR 100K (CS39S)
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*