參數(shù)資料
型號(hào): AM29F800B-150EIB
廠商: Advanced Micro Devices, Inc.
英文描述: 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
中文描述: 8兆位(1,048,576 x 8-Bit/524,288 x 16位),5.0伏的CMOS只,扇區(qū)擦除閃存
文件頁(yè)數(shù): 33/41頁(yè)
文件大小: 267K
代理商: AM29F800B-150EIB
8/18/97
Am29F800T/Am29F800B
33
P R E L I M I N A R Y
Notes:
1. All protected sectors unprotected.
2. All previously protected sectors are protected once again.
Figure 17.
Temporary Sector Unprotect Algorithm
Figure 18.
Temporary Sector Unprotect Timing Diagram
Start
Perform Erase or
Program Operations
RESET = V
IH
Temporary Sector Group
Unprotect Completed
(Note 2)
RESET = V
ID
(Note 1)
20375C-22
0 V or 5 V
12 V
Program or Erase Command Sequence
RESET
CE
WE
0 V or 5 V
t
VIDR
t
RSP
20375C-23
相關(guān)PDF資料
PDF描述
AM29F800B-150FC 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800B-150FCB 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800B-150FE 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800B-150FEB 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800B-150FI 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
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