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參數(shù)資料
| 型號： | AM29F800B-150SI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| 中文描述： | 512K X 16 FLASH 5V PROM, 150 ns, PDSO44 |
| 封裝： | SOP-44 |
| 文件頁數(shù)： | 41/41頁 |
| 文件大小： | 267K |
| 代理商： | AM29F800B-150SI |
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8/18/97
Am29F800T/Am29F800B
41
P R E L I M I N A R Y
REVISION SUMMARY FOR Am29F800
Distinctive Characteristics:
High Performance: The fastest speed option available
is now 70 ns.
Enhanced power management for standby mode:
Changed typical standby current to 1
μ
A.
General Description:
Added 70 ns speed option.
Product Selector Guide:
Added -70 column.
Pin Configuration:
Added -70 speed option.
Ordering Information, Standard Products:
The -70 speed option is now listed in the example.
Valid Combinations:Added combinations for the -70
speed option.
Table 7, Command Definitions:
Corrected byte addresses for unlock and command cy-
cles from “2AA” to “AAA”.
In the previous data sheet revision, the addresses for
command definitions were shortened from four hexa-
decimal digits to three. The more accurately represents
the actual address bits required, A10–A0. The remain-
ing upper address bits are don’t cares.
The new address is compatible with the previous four-
digit definition of “AAAA”; the only difference is that the
highest-order hexadecimal digit “A” is now “don’t care”.
In fact, software programs written using the previous
four-digit definitions do not require any changes; they
remain completely compatible with the new three-digit
definitions.
The addresses for the byte-mode read cycles (fourth
cycle) in the autoselect mode are corrected from 01h to
02h for device ID, and from SAX02h to SAX04h for
sector protect verification.
Note 5 is clarified.
Operating Ranges:
V
CC
Supply Voltages:Added -70 speed option to the
list.
DC Characteristics:
CMOS Compatible:Added column for typical I
CC
spec-
ifications. Revised max I
CC
specifications.
AC Characteristics:
Read Only Operations Characteristics:Added the -70
column and test conditions.
Test Conditions, Figure 7:
Changed speed option in first C
L
statement to -70.
AC Characteristics:
Write/Erase/Program Operations, Alternate CE Con-
trolled Writes: Added the -70 column; revised word/
byte programming and sector erase specifications.
Erase and Programming Performance:
Revised specifications.
Trademarks
Copyright 1997 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof, and ExpressFlash are trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F800B-150SIB | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F800B-70 | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F800B-70EC | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F800B-70ECB | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F800B-70EE | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F800BB-120DPC1 | 制造商:Spansion 功能描述:5V 8M FLASH KNOWN GOOD DIE W/BOTTOM BOOT (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F800BB120SC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F800BB-55EC | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M/512K x 8bit/16bit 55ns 48-Pin TSOP |
| AM29F800BB-55EF | 功能描述:閃存 8M (1MX8/512KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AM29F800BB-55EF\\T | 制造商:Spansion 功能描述:IC 8MEG(512K16)BOTTOM SCTOR 100K (CS39S) |
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