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參數(shù)資料
| 型號： | AM29F800B-70EE |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| 中文描述： | 8兆位（1,048,576 x 8-Bit/524，288 x 16位），5.0伏的CMOS只，扇區(qū)擦除閃存 |
| 文件頁數(shù)： | 26/41頁 |
| 文件大?。?/td> | 267K |
| 代理商： | AM29F800B-70EE |
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26
Am29F800T/Am29F800B
8/18/97
P R E L I M I N A R Y
AC CHARACTERISTICS
Read-only Operations Characteristics
Figure 7.
Test Conditions
Parameter
Symbols
Description
Test Setup
Speed Options (Notes 1
and 2)
Unit
JEDEC
Standard
-70
-90
-120
-150
t
AVAV
t
RC
Read Cycle Time (Note 4)
Min
70
90
120
150
ns
t
AVQV
t
ACC
Address to Output Delay
CE = V
IL
Max
70
90
120
150
ns
OE = V
IL
t
ELQV
t
CE
Chip Enable to Output Delay
OE = V
IL
Max
70
90
120
150
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max
30
35
50
55
ns
t
EHQZ
t
DF
Chip Enable to Output High Z (Notes 3, 4)
Max
20
20
30
35
ns
t
GHQZ
t
DF
Output Enable to Output High Z (Notes 3, 4)
Max
20
20
30
35
ns
t
AXQX
t
OH
Output Hold Time From Addresses, CE,
or OE, Whichever Occurs First
Min
0
0
0
0
ns
t
Ready
RESET Pin Low to Read Mode (Note 4)
Max
20
20
20
20
μ
s
t
ELFL
CE to BYTE Switching Low or High
Max
5
5
5
5
ns
t
ELFH
t
FLQZ
BYTE Switching Low to Output High Z
(Note 3)
Max
20
30
30
30
ns
Notes:
1. Test Conditions (for -70 only):
Output Load: 1 TTL gate and 30 pF
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V to 3.0 V
Timing measurement reference level
input and output voltage: 1.5 V
2. Test Conditions (for all others):
Output Load: 1 TTL gate and 100 pF
Input rise and fall times: 20 ns
Input pulse levels: 0.45 V to 2.4 V
Timing measurement reference
level, input and output voltages:
0.8 V and 2.0 V
3. Output driver disable time.
4. Not 100% tested.
2.7 k
Diodes = IN3064
or Equivalent
C
L
6.2 k
5.0 V
IN3064
or Equivalent
Notes:
For -70: C
L
= 30 pF including jig capacitance
For all others: C
L
= 100 pF including jig capacitance
Device
Under
Test
20375C-12
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F800B-70EEB | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F800B-70EI | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F800B-70EIB | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F800B-70FC | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F800B-90FE | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
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