參數(shù)資料
型號(hào): AM29F800B
廠商: Advanced Micro Devices, Inc.
英文描述: Dual Retriggerable Monostable Multivibrators 16-TSSOP -40 to 85
中文描述: 8兆位(1 M中的x 8-Bit/512畝x 16位),5.0伏的CMOS只,引導(dǎo)扇區(qū)閃存
文件頁(yè)數(shù): 26/39頁(yè)
文件大?。?/td> 518K
代理商: AM29F800B
32
Am29F800B
P R E L I M I NARY
AC CHARACTERISTICS
Temporary Sector Unprotect
Note: Not 100% tested.
Parameter
All Speed Options
JEDEC
Std.
Description
Unit
tVIDR
VID Rise and Fall Time (See Note)
Min
500
ns
tRSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
s
Note: The system may use OE# or CE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within the
erase-suspended sector.
21504C-20
Figure 17.
DQ2 vs. DQ6
Enter
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
Program
Resume
Embedded
Erasing
RESET#
tVIDR
12 V
0 or 5 V
CE#
WE#
RY/BY#
tVIDR
tRSP
Program or Erase Command Sequence
0 or 5 V
21504C-21
Figure 18.
Temporary Sector Unprotect Timing Diagram
相關(guān)PDF資料
PDF描述
Am29F800BB-120DPI Dual Retriggerable Monostable Multivibrators 16-TSSOP -40 to 85
Am29F800BB-120DTC Dual Retriggerable Monostable Multivibrators 16-TSSOP -40 to 85
AM29F800BB-120DTC1 Dual Retriggerable Monostable Multivibrators 16-TSSOP -40 to 85
Am29F800BB-120DTE Dual Retriggerable Monostable Multivibrators 16-TSSOP -40 to 85
AM29DS323DB110 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
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